HWCVD Technology Development Addressed to the High Rate Deposition of mi-c-Si:H
The first block of this thesis deals with the study of the degradation process of tungsten catalytic filaments in the field of silicon deposition with the Hot Wire Chemical Vapour Deposition (HWCVD) technique. The development of technological solutions addressed to the filaments protection will also...
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| Tipo de recurso: | tesis doctoral |
| Estado: | Versión publicada |
| Fecha de publicación: | 2013 |
| País: | España |
| Institución: | CBUC, CESCA |
| Repositorio: | TDR. Tesis Doctorales en Red |
| OAI Identifier: | oai:www.tdx.cat:10803/98346 |
| Acceso en línea: | http://hdl.handle.net/10803/98346 |
| Access Level: | acceso abierto |
| Palabra clave: | Deposició en fase de vapor Deposición en fase de vapor Vapor-plating Hot Wire CVD ECV de alambre caliente ECV de fil calent Cat-CVD Cèl·lules solars Células solares Solar cells Silici Silicio Silicon Pel·lícules fines Películas delgadas Thin films Microcrystalline silicon Silici microcristal·lí Silicio microcristalino Ciències Experimentals i Matemàtiques 53 |
| Sumario: | The first block of this thesis deals with the study of the degradation process of tungsten catalytic filaments in the field of silicon deposition with the Hot Wire Chemical Vapour Deposition (HWCVD) technique. The development of technological solutions addressed to the filaments protection will also be dealt as well as the design, fabrication and performance of a novel system for the automatic replacement of used filaments in a HWCVD reactor. The second block deals with the scaling up of HWCVD towards large area deposition and the existence of a scaling law that may allow the deposition of microcrystalline silicon (µc-Si:H) at high rate preserving the material quality. |
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