HWCVD Technology Development Addressed to the High Rate Deposition of mi-c-Si:H
[eng] The first block of this thesis deals with the study of the degradation process of tungsten catalytic filaments in the field of silicon deposition with the Hot Wire Chemical Vapour Deposition (HWCVD) technique. The development of technological solutions addressed to the filaments protection wil...
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| Tipo de recurso: | tesis doctoral |
| Estado: | Versión publicada |
| Fecha de publicación: | 2013 |
| País: | España |
| Institución: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/41810 |
| Acceso en línea: | https://hdl.handle.net/2445/41810 http://hdl.handle.net/10803/98346 |
| Access Level: | acceso abierto |
| Palabra clave: | Cèl·lules solars Silici Pel·lícules fines Semiconductors Deposició en fase de vapor Solar cells Silicon Thin films Vapor-plating |
| Sumario: | [eng] The first block of this thesis deals with the study of the degradation process of tungsten catalytic filaments in the field of silicon deposition with the Hot Wire Chemical Vapour Deposition (HWCVD) technique. The development of technological solutions addressed to the filaments protection will also be dealt as well as the design, fabrication and performance of a novel system for the automatic replacement of used filaments in a HWCVD reactor. The second block deals with the scaling up of HWCVD towards large area deposition and the existence of a scaling law that may allow the deposition of microcrystalline silicon (µc-Si:H) at high rate preserving the material quality. |
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