Control of doped layers in p-i-n microcrystalline solar cells fully deposited with HWCVD
In this paper, the influence of the deposition conditions on the performance of p-i-n microcrystalline silicon solar cells completely deposited by hot-wire chemical vapor deposition is studied. With this aim, the role of the doping concentration, the substrate temperature of the p-type layer and of...
| Autores: | , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2004 |
| País: | España |
| Institución: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/47295 |
| Acceso en línea: | https://hdl.handle.net/2445/47295 |
| Access Level: | acceso abierto |
| Palabra clave: | Cèl·lules solars Silici Deposició química en fase vapor Solar cells Silicon Chemical vapor deposition |
| Sumario: | In this paper, the influence of the deposition conditions on the performance of p-i-n microcrystalline silicon solar cells completely deposited by hot-wire chemical vapor deposition is studied. With this aim, the role of the doping concentration, the substrate temperature of the p-type layer and of amorphous silicon buffer layers between the p/i and i/n microcrystalline layers is investigated. Best results are found when the p-type layer is deposited at a substrate temperature of 125 °C. The dependence seen of the cell performance on the thickness of the i layer evidenced that the efficiency of our devices is still limited by the recombination within this layer, which is probably due to the charge of donor centers most likely related to oxygen. |
|---|