High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

Bibliographic Details
Authors: Ulloa Herrero, José María|||0000-0002-5679-372X, Llorens, J.M., Alén Millán, Benito, Reyes, D.F., Sales, D.L., Gonzalez, D., Hierro Cano, Adrián|||0000-0002-0414-4920
Format: article
Publication Date:2012
Country:España
Institution:Universidad Politécnica de Madrid
Repository:Archivo Digital UPM
OAI Identifier:oai:oa.upm.es:16349
Online Access:https://oa.upm.es/16349/
Access Level:Open access
Keyword:gallium arsenide
III-V semiconductors
indium compounds
photoluminescence
radiative lifetimes
rapid thermal annealing
semiconductor quantum dots
Description
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