Electrical control of spin-polarized topological currents in monolayer WTe2
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall condu...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:269762 |
| Acceso en línea: | https://ddd.uab.cat/record/269762 https://dx.doi.org/urn:doi:10.1103/PhysRevB.106.L161410 |
| Access Level: | acceso abierto |
| Palabra clave: | Ab initio simulations Based modelling Edge state Electrical control Electrical manipulation Quantum spin halls Spin hall insulator Spin orientations Spin-polarized Topological currents |
| Sumario: | We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge currents in monolayer 1T'-WTe2 by up to a 90-degree spin rotation, without jeopardizing their topological character. These findings suggest a new kind of gate-controllable spin-based device, topologically protected against disorder and of relevance for the development of topological spintronics. |
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