Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells

SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using differ...

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Autores: Maestre Varea, David, Palais, O., Barakel, D., Pasquinelli, M., Alfonso, B., Gourbilleau, F., De Laurentis, M., Irace, A.
Tipo de recurso: artículo
Fecha de publicación:2010
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/42750
Acceso en línea:https://hdl.handle.net/20.500.14352/42750
Access Level:acceso abierto
Palabra clave:538.9
Silicon
Nanostructures
Nanoparticles
Nanocrystals
Luminescence
Fabrication
Absorption
Lifetime
Industry
Samples
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
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repository_id_str
spelling Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cellsMaestre Varea, DavidPalais, O.Barakel, D.Pasquinelli, M.Alfonso, B.Gourbilleau, F.De Laurentis, M.Irace, A.538.9SiliconNanostructuresNanoparticlesNanocrystalsLuminescenceFabricationAbsorptionLifetimeIndustrySamplesFísica de materialesFísica del estado sólido2211 Física del Estado SólidoSiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (10^2 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under "dark" or "illumination" conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique.American Institute of PhysicsUniversidad Complutense de Madrid20102010-03-1520102010-03-15journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/42750reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/427502026-06-02T12:44:21Z
dc.title.none.fl_str_mv Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
title Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
spellingShingle Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
Maestre Varea, David
538.9
Silicon
Nanostructures
Nanoparticles
Nanocrystals
Luminescence
Fabrication
Absorption
Lifetime
Industry
Samples
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
title_full Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
title_fullStr Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
title_full_unstemmed Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
title_sort Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
dc.creator.none.fl_str_mv Maestre Varea, David
Palais, O.
Barakel, D.
Pasquinelli, M.
Alfonso, B.
Gourbilleau, F.
De Laurentis, M.
Irace, A.
author Maestre Varea, David
author_facet Maestre Varea, David
Palais, O.
Barakel, D.
Pasquinelli, M.
Alfonso, B.
Gourbilleau, F.
De Laurentis, M.
Irace, A.
author_role author
author2 Palais, O.
Barakel, D.
Pasquinelli, M.
Alfonso, B.
Gourbilleau, F.
De Laurentis, M.
Irace, A.
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Silicon
Nanostructures
Nanoparticles
Nanocrystals
Luminescence
Fabrication
Absorption
Lifetime
Industry
Samples
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Silicon
Nanostructures
Nanoparticles
Nanocrystals
Luminescence
Fabrication
Absorption
Lifetime
Industry
Samples
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (10^2 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under "dark" or "illumination" conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique.
publishDate 2010
dc.date.none.fl_str_mv 2010
2010-03-15
2010
2010-03-15
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/42750
url https://hdl.handle.net/20.500.14352/42750
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869410001517281280
score 15,298079

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