Flexophotovoltaic Effect and Above-Band-Gap Photovoltage Induced by Strain Gradients in Halide Perovskites

We have measured the flexophotovoltaic effect of single crystals of halide perovskites MAPbBr3 and MAPbI3, as well as the benchmark oxide perovskite SrTiO3. For halide perovskites, the flexophotovoltaic effect is found to be orders of magnitude larger than for SrTiO3, and indeed large enough to indu...

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Bibliographic Details
Authors: Wang, Zhiguo|||0000-0001-9409-1334, Shu, Shengwen, Wei, Xiaoyong, Liang, Renhong, Ke, Shanming|||0000-0003-3204-1416, Shu, Longlong|||0000-0002-7121-1652, Catalan, Gustau|||0000-0003-0214-4828
Format: article
Publication Date:2024
Country:España
Institution:Universitat Autònoma de Barcelona
Repository:Dipòsit Digital de Documents de la UAB
Language:English
OAI Identifier:oai:ddd.uab.cat:307865
Online Access:https://ddd.uab.cat/record/307865
https://dx.doi.org/urn:doi:10.1103/PhysRevLett.132.086902
Access Level:Open access
Keyword:Halide perovskites
Orders of magnitude
Oxide perovskite
Photo-voltage
Photovoltaic materials
Photovoltaic response
Photovoltaics
Strain gradients
Switchable
Description
Summary:We have measured the flexophotovoltaic effect of single crystals of halide perovskites MAPbBr3 and MAPbI3, as well as the benchmark oxide perovskite SrTiO3. For halide perovskites, the flexophotovoltaic effect is found to be orders of magnitude larger than for SrTiO3, and indeed large enough to induce photovoltages bigger than the band gap. Moreover, we find that in MAPbI3 the flexophotovoltaic effect is additional to a native bulk photovoltaic response that is switchable and ferroelectric-like. The results suggest that strain gradient engineering can be a powerful tool to modify the photovoltaic output even in already well-established photovoltaic materials.