GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

[EN]GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from S-parameters measurements in small diodes is proposed, ob...

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Autores: Orfao e Vale Tabernero, Beatriz, Abou-Daher, Mahmoud, Zegaoui, Malek, Mateos López, Javier, Okada, Etienne, Lepilliet, Silvie, Ducournau, Guilaume, Zaknoune, Mohammed, Roelens, Yannick
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/160316
Acceso en línea:http://hdl.handle.net/10366/160316
Access Level:acceso abierto
Palabra clave:Schottky barrier diode
Equivalent circuit
S parameters
GaN
3307.92 Microelectrónica. Tecnologías III-V y Alternativas
3307 Tecnología Electrónica
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spelling GaN Schottky Diodes Parameter Extraction Model from S-Parameters MeasurementOrfao e Vale Tabernero, BeatrizAbou-Daher, MahmoudZegaoui, MalekMateos López, JavierOkada, EtienneLepilliet, SilvieDucournau, GuilaumeZaknoune, MohammedRoelens, YannickSchottky barrier diodeEquivalent circuitS parametersGaN3307.92 Microelectrónica. Tecnologías III-V y Alternativas3307 Tecnología Electrónica[EN]GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from S-parameters measurements in small diodes is proposed, obtaining good capacitance agreement compared with that extracted from capacitance-voltage (C-V) measurements carried out in large-area diodes where the parasitic effects are not significant.This work is supported by CPER Wavetech, and University of Lille, Ultra-High Data-rate (UHD) IEMN flagship, grant PID2020-115842RB-I00 funded by MCIN/ AEI/10.13039/501100011033, and grant SA136P23 by the Junta de Castilla y León and FEDER. The nano-fabrication is supported by the French network RENATECH, and the Equipex+ Nanofutur program, under the project IA-21-ESRE- 0012 operated by the ANR.IEEE202420242024info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10366/160316reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésSA136P23PID2020-115842RB-I00Attribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1603162026-06-07T06:28:51Z
dc.title.none.fl_str_mv GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
title GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
spellingShingle GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
Orfao e Vale Tabernero, Beatriz
Schottky barrier diode
Equivalent circuit
S parameters
GaN
3307.92 Microelectrónica. Tecnologías III-V y Alternativas
3307 Tecnología Electrónica
title_short GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
title_full GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
title_fullStr GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
title_full_unstemmed GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
title_sort GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
dc.creator.none.fl_str_mv Orfao e Vale Tabernero, Beatriz
Abou-Daher, Mahmoud
Zegaoui, Malek
Mateos López, Javier
Okada, Etienne
Lepilliet, Silvie
Ducournau, Guilaume
Zaknoune, Mohammed
Roelens, Yannick
author Orfao e Vale Tabernero, Beatriz
author_facet Orfao e Vale Tabernero, Beatriz
Abou-Daher, Mahmoud
Zegaoui, Malek
Mateos López, Javier
Okada, Etienne
Lepilliet, Silvie
Ducournau, Guilaume
Zaknoune, Mohammed
Roelens, Yannick
author_role author
author2 Abou-Daher, Mahmoud
Zegaoui, Malek
Mateos López, Javier
Okada, Etienne
Lepilliet, Silvie
Ducournau, Guilaume
Zaknoune, Mohammed
Roelens, Yannick
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Schottky barrier diode
Equivalent circuit
S parameters
GaN
3307.92 Microelectrónica. Tecnologías III-V y Alternativas
3307 Tecnología Electrónica
topic Schottky barrier diode
Equivalent circuit
S parameters
GaN
3307.92 Microelectrónica. Tecnologías III-V y Alternativas
3307 Tecnología Electrónica
description [EN]GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from S-parameters measurements in small diodes is proposed, obtaining good capacitance agreement compared with that extracted from capacitance-voltage (C-V) measurements carried out in large-area diodes where the parasitic effects are not significant.
publishDate 2024
dc.date.none.fl_str_mv 2024
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/160316
url http://hdl.handle.net/10366/160316
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv SA136P23
PID2020-115842RB-I00
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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