GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement

[EN]GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from S-parameters measurements in small diodes is proposed, ob...

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Detalles Bibliográficos
Autores: Orfao e Vale Tabernero, Beatriz, Abou-Daher, Mahmoud, Zegaoui, Malek, Mateos López, Javier, Okada, Etienne, Lepilliet, Silvie, Ducournau, Guilaume, Zaknoune, Mohammed, Roelens, Yannick
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/160316
Acceso en línea:http://hdl.handle.net/10366/160316
Access Level:acceso abierto
Palabra clave:Schottky barrier diode
Equivalent circuit
S parameters
GaN
3307.92 Microelectrónica. Tecnologías III-V y Alternativas
3307 Tecnología Electrónica
Descripción
Sumario:[EN]GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from S-parameters measurements in small diodes is proposed, obtaining good capacitance agreement compared with that extracted from capacitance-voltage (C-V) measurements carried out in large-area diodes where the parasitic effects are not significant.

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