Analysis of set and reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain.Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds....

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Bibliographic Details
Authors: Maestro Izquierdo, Marcos|||0000-0002-8940-9050, Martin Martinez, Javier|||0000-0001-5938-5898, Diaz-Fortuny, Javier|||0000-0002-8186-071X, Crespo Yepes, Albert|||0000-0003-4618-651X, Bargallo Gonzalez, Mireia|||0000-0001-6792-4556, Rodríguez Martínez, Rosana|||0000-0002-4565-6703, Campabadal, Francesca|||0000-0001-7758-4567, Nafria, Montserrat|||0000-0002-9549-2890, Aymerich Humet, Xavier|||0000-0002-5874-6257
Format: article
Publication Date:2015
Country:España
Institution:Universitat Autònoma de Barcelona
Repository:Dipòsit Digital de Documents de la UAB
Language:English
OAI Identifier:oai:ddd.uab.cat:133466
Online Access:https://ddd.uab.cat/record/133466
https://dx.doi.org/urn:doi:10.1016/j.mee.2015.04.057
Access Level:Open access
Keyword:Resistive switching random access memory (RRAM)
Metal-insulator-semiconductor (MIS)
Fast ramped voltages
Time domain measurements
Description
Summary:The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain.Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions.

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