Non-homogeneuos conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM

Conductive filaments (CFs) in Ni/HfO₂/Si resistive switching structures are analysed at the nanoscale by means of Conductive Atomic Force Microscopy (CAFM). Differences in the CF conductivity are measured depending on the resistive state of the device. Moreover, for both resistance states, non-homog...

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Detalles Bibliográficos
Autores: Claramunt, Sergi|||0000-0002-2888-7825, Wu, Qian, Maestro Izquierdo, Marcos|||0000-0002-8940-9050, Porti i Pujal, Marc|||0000-0001-7438-3823, Bargallo Gonzalez, Mireia|||0000-0001-6792-4556, Martin Martinez, Javier|||0000-0001-5938-5898, Campabadal, Francesca|||0000-0001-7758-4567, Nafria, Montserrat|||0000-0002-9549-2890
Tipo de recurso: artículo
Fecha de publicación:2015
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:163085
Acceso en línea:https://ddd.uab.cat/record/163085
https://dx.doi.org/urn:doi:10.1016/j.mee.2015.04.112
Access Level:acceso abierto
Palabra clave:Resistive switching
CAFM
Metal-insulator-semiconductor (MIS)
Descripción
Sumario:Conductive filaments (CFs) in Ni/HfO₂/Si resistive switching structures are analysed at the nanoscale by means of Conductive Atomic Force Microscopy (CAFM). Differences in the CF conductivity are measured depending on the resistive state of the device. Moreover, for both resistance states, non-homogeneous conduction across the CF area is observed, in agreement with a tree-shaped CF.

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