Self‐assembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation
Self-organized InSb dots grown by atomic layer molecular beam epitaxy on InP substrates have been characterized by atomic force and transmission electron microscopy. Measurement of high-energy electron diffraction during the growth indicates a Stransky–Krastanov growth mode beyond the onset of 1.4 I...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1996 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/46957 |
| Acceso en línea: | http://hdl.handle.net/10261/46957 |
| Access Level: | acceso abierto |
| Sumario: | Self-organized InSb dots grown by atomic layer molecular beam epitaxy on InP substrates have been characterized by atomic force and transmission electron microscopy. Measurement of high-energy electron diffraction during the growth indicates a Stransky–Krastanov growth mode beyond the onset of 1.4 InSb monolayer ~ML! deposition. The dots obtained after a total deposition of 5 and 7 ML of InSb present a truncated pyramidal morphology with rectangular base oriented along the ^110& directions, elongated towards the @110# direction with $111%B lateral facets, with $113%/$114%/$111%A lateral facets in @11 ¯ 0# views, and ~001! flat top surfaces. The mismatch between the dot and the substrate has been accommodated by a network of 90° misfit dislocation at the interface. A corrugation of the InP substrate surrounding the dot has been also observed |
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