Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

[EN]This study investigates the performance of planar Gunn diodes based on highly doped Gallium Nitride using Monte Carlo simulations. The conversion efficiency is evaluated in geometrically V-shaped channels with an active region length of 500 nm, an input channel width of 200 nm, and output widths...

Descripción completa

Detalles Bibliográficos
Autores: Sergio, García Sánchez, González Sánchez, Tomás, Mateos López, Javier
Tipo de recurso: artículo
Estado:Versión enviada para evaluación y publicación
Fecha de publicación:2025
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/163596
Acceso en línea:http://hdl.handle.net/10366/163596
Access Level:acceso abierto
Palabra clave:DC-to-ac conversion efficiency
Doped gallium nitride (GaN) diode
GaN
Gunn diode
Monte Carlo simulations
Oscillation frequency
id ES_611f71b970e08d596adf70ed5ffeec4d
oai_identifier_str oai:gredos.usal.es:10366/163596
network_acronym_str ES
network_name_str España
repository_id_str
spelling Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and TemperatureSergio, García SánchezGonzález Sánchez, TomásMateos López, JavierDC-to-ac conversion efficiencyDoped gallium nitride (GaN) diodeGaNGunn diodeMonte Carlo simulationsOscillation frequency[EN]This study investigates the performance of planar Gunn diodes based on highly doped Gallium Nitride using Monte Carlo simulations. The conversion efficiency is evaluated in geometrically V-shaped channels with an active region length of 500 nm, an input channel width of 200 nm, and output widths of 200 nm, 220 nm, and 250 nm. The diodes are subjected to various biasing conditions to assess DC-to-AC conversion efficiency under different AC biases, simulating operating conditions similar to those found in tuned circuits (comprising R, L, and C elements). The efficiency is analyzed for an AC voltage of 2 V superimposed on a 20 V DC bias, considering four distinct doping levels in the active region. These devices demonstrate conversion efficiencies of up to 0.36 % at frequencies of 340 GHz for a channel doping level of N_D=1.0x10^18 cm-3 and an output width of 250 nm. The increase of lattice temperature reduces the efficiency of the diodes, although the obtained values indicate that the devices would still remain operational. Additionally, the frequency range where efficiency is positive (generation band) decreases as temperature increases.Institute of Electrical and Electronics Engineers202520252025info:eu-repo/semantics/articleinfo:eu-repo/semantics/submittedVersionapplication/pdfhttp://hdl.handle.net/10366/163596reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)Inglésinfo:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1635962026-06-07T06:28:51Z
dc.title.none.fl_str_mv Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
title Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
spellingShingle Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
Sergio, García Sánchez
DC-to-ac conversion efficiency
Doped gallium nitride (GaN) diode
GaN
Gunn diode
Monte Carlo simulations
Oscillation frequency
title_short Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
title_full Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
title_fullStr Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
title_full_unstemmed Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
title_sort Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
dc.creator.none.fl_str_mv Sergio, García Sánchez
González Sánchez, Tomás
Mateos López, Javier
author Sergio, García Sánchez
author_facet Sergio, García Sánchez
González Sánchez, Tomás
Mateos López, Javier
author_role author
author2 González Sánchez, Tomás
Mateos López, Javier
author2_role author
author
dc.subject.none.fl_str_mv DC-to-ac conversion efficiency
Doped gallium nitride (GaN) diode
GaN
Gunn diode
Monte Carlo simulations
Oscillation frequency
topic DC-to-ac conversion efficiency
Doped gallium nitride (GaN) diode
GaN
Gunn diode
Monte Carlo simulations
Oscillation frequency
description [EN]This study investigates the performance of planar Gunn diodes based on highly doped Gallium Nitride using Monte Carlo simulations. The conversion efficiency is evaluated in geometrically V-shaped channels with an active region length of 500 nm, an input channel width of 200 nm, and output widths of 200 nm, 220 nm, and 250 nm. The diodes are subjected to various biasing conditions to assess DC-to-AC conversion efficiency under different AC biases, simulating operating conditions similar to those found in tuned circuits (comprising R, L, and C elements). The efficiency is analyzed for an AC voltage of 2 V superimposed on a 20 V DC bias, considering four distinct doping levels in the active region. These devices demonstrate conversion efficiencies of up to 0.36 % at frequencies of 340 GHz for a channel doping level of N_D=1.0x10^18 cm-3 and an output width of 250 nm. The increase of lattice temperature reduces the efficiency of the diodes, although the obtained values indicate that the devices would still remain operational. Additionally, the frequency range where efficiency is positive (generation band) decreases as temperature increases.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/submittedVersion
format article
status_str submittedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/163596
url http://hdl.handle.net/10366/163596
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869409369986170880
score 15,81155

Similares en LA Referencia