Effect of different buffer layers on the quality of InGaN layers grown on Si

This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In...

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Detalles Bibliográficos
Autores: Varela Del Arco, María, Gómez, Víctor J., Grandal, Javier, Núñez Cascarejo, Arántzazu, Naranjo, Fernando B., Sánchez García, M. A., Calleja, E.
Tipo de recurso: artículo
Fecha de publicación:2018
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/12986
Acceso en línea:https://hdl.handle.net/20.500.14352/12986
Access Level:acceso abierto
Palabra clave:538.9
SI(111)
Surface
Nanoscience
Nanotechnology
Materials science
Multidisciplinary
Physics
Applied
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
id ES_5f7f3ba2bd37b5ea971e35b723a768ae
oai_identifier_str oai:docta.ucm.es:20.500.14352/12986
network_acronym_str ES
network_name_str España
repository_id_str
spelling Effect of different buffer layers on the quality of InGaN layers grown on SiVarela Del Arco, MaríaGómez, Víctor J.Grandal, JavierNúñez Cascarejo, ArántzazuNaranjo, Fernando B.Sánchez García, M. A.Calleja, E.538.9SI(111)SurfaceNanoscienceNanotechnologyMaterials scienceMultidisciplinaryPhysicsAppliedFísica de materialesFísica del estado sólido2211 Física del Estado SólidoThis work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.American Institute of PhysicsUniversidad Complutense de Madrid20182018-10-0120182018-10-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/12986reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución 3.0 Españahttps://creativecommons.org/licenses/by/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/129862026-06-02T12:44:21Z
dc.title.none.fl_str_mv Effect of different buffer layers on the quality of InGaN layers grown on Si
title Effect of different buffer layers on the quality of InGaN layers grown on Si
spellingShingle Effect of different buffer layers on the quality of InGaN layers grown on Si
Varela Del Arco, María
538.9
SI(111)
Surface
Nanoscience
Nanotechnology
Materials science
Multidisciplinary
Physics
Applied
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Effect of different buffer layers on the quality of InGaN layers grown on Si
title_full Effect of different buffer layers on the quality of InGaN layers grown on Si
title_fullStr Effect of different buffer layers on the quality of InGaN layers grown on Si
title_full_unstemmed Effect of different buffer layers on the quality of InGaN layers grown on Si
title_sort Effect of different buffer layers on the quality of InGaN layers grown on Si
dc.creator.none.fl_str_mv Varela Del Arco, María
Gómez, Víctor J.
Grandal, Javier
Núñez Cascarejo, Arántzazu
Naranjo, Fernando B.
Sánchez García, M. A.
Calleja, E.
author Varela Del Arco, María
author_facet Varela Del Arco, María
Gómez, Víctor J.
Grandal, Javier
Núñez Cascarejo, Arántzazu
Naranjo, Fernando B.
Sánchez García, M. A.
Calleja, E.
author_role author
author2 Gómez, Víctor J.
Grandal, Javier
Núñez Cascarejo, Arántzazu
Naranjo, Fernando B.
Sánchez García, M. A.
Calleja, E.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
SI(111)
Surface
Nanoscience
Nanotechnology
Materials science
Multidisciplinary
Physics
Applied
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
SI(111)
Surface
Nanoscience
Nanotechnology
Materials science
Multidisciplinary
Physics
Applied
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.
publishDate 2018
dc.date.none.fl_str_mv 2018
2018-10-01
2018
2018-10-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/12986
url https://hdl.handle.net/20.500.14352/12986
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869409211078672384
score 15.301603

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