Effect of different buffer layers on the quality of InGaN layers grown on Si
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/12986 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/12986 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 SI(111) Surface Nanoscience Nanotechnology Materials science Multidisciplinary Physics Applied Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design. |
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