Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they con...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2002 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59097 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59097 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Scattering In(1-x)GaxAsyP(1-y) InP. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro-Raman measurements on these defects show that they consist of InxGa1-xP alloys, suggesting that phosphorus diffusion from the InP substrate occurs during the RTA cycle. The defect-free region of the epilayer is also altered leading to the formation of an In1-xGaxAs1-yPy quaternary alloy. |
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