Evidence of phosphorus incorporation into InGaAs/InP epilayersafter thermal annealing
We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman signal associated with InP-like modes was detected in the...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2003 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/51135 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/51135 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Raman-Scattering Implantation Damage Ion-Implantation In(1-x)GaxAsyP(1-y) InP Si In(0.53)Ga(0.47)As Behavior Alloys Modes. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman signal associated with InP-like modes was detected in the annealed samples. The effect is also observed in samples where the substrate was protected by a SiNx:H capping and were annealed in arsenic atmosphere, thus ruling out the possibility of a surface contamination by atmospheric phosphorus evaporated from the InP substrate.. Protruding regions. of a few microns were observed on the surface, which were identified as misoriented In1-xGaP and InP crystals by means of micro-Raman measurements. (C) 2003 American Institute of Physics. |
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