Use of Kramers-Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps
The use of Kramers–Kronig transforms is proposed for the treatment of admittance spectroscopy data of junctions when significant shunt conductance or series resistance is present. An algorithm has been implemented to calculate the transformations numerically and the validity of the method developed...
| Autores: | , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 1996 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59661 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/59661 |
| Access Level: | acceso abierto |
| Palavra-chave: | 537 High-resistivity InP. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Resumo: | The use of Kramers–Kronig transforms is proposed for the treatment of admittance spectroscopy data of junctions when significant shunt conductance or series resistance is present. An algorithm has been implemented to calculate the transformations numerically and the validity of the method developed has been tested using simulated data. Two experimental systems, p-n junctions into InP made by ion implantation, and atomic-layer-epitaxy-grown CdS/CdTe heterojunctions, have been characterized using this procedure. |
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