High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices

Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical activations of about 100%, and mobilities as high as 400...

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Detalles Bibliográficos
Autores: Martil De La Plaza, Ignacio, González Díaz, Germán
Tipo de recurso: artículo
Fecha de publicación:2000
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59233
Acceso en línea:https://hdl.handle.net/20.500.14352/59233
Access Level:acceso abierto
Palabra clave:537
InGaAs
InP
Luminescence
Photodiode.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/59233
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spelling High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devicesMartil De La Plaza, IgnacioGonzález Díaz, Germán537InGaAsInPLuminescencePhotodiode.ElectricidadElectrónica (Física)2202.03 ElectricidadSi implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical activations of about 100%, and mobilities as high as 4000 cm(2)/V s were obtained. Different Hall measurements show that there is no redistribution of the dopants. Photoluminescence measurements demonstrate the satisfactory recrystallization of the lattice and the excellent activation of the dopants. Electrical characteristics of n(+)p junctions made by Si implantation into Zn-doped In0.53Ga0.47As are described. Junction behavior at forward bias could be explained by recombination in the space-charge zone mechanisms, whereas different tunneling processes dominate at reverse bias. (C) 2000 American Institute of Physics. [S0021-8979(00)01807-7].American Institute of PhysicsUniversidad Complutense de Madrid20002000-04-0120002000-04-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59233reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/592332026-06-02T12:44:21Z
dc.title.none.fl_str_mv High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
title High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
spellingShingle High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
Martil De La Plaza, Ignacio
537
InGaAs
InP
Luminescence
Photodiode.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
title_full High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
title_fullStr High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
title_full_unstemmed High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
title_sort High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
author_role author
author2 González Díaz, Germán
author2_role author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
InGaAs
InP
Luminescence
Photodiode.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
InGaAs
InP
Luminescence
Photodiode.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical activations of about 100%, and mobilities as high as 4000 cm(2)/V s were obtained. Different Hall measurements show that there is no redistribution of the dopants. Photoluminescence measurements demonstrate the satisfactory recrystallization of the lattice and the excellent activation of the dopants. Electrical characteristics of n(+)p junctions made by Si implantation into Zn-doped In0.53Ga0.47As are described. Junction behavior at forward bias could be explained by recombination in the space-charge zone mechanisms, whereas different tunneling processes dominate at reverse bias. (C) 2000 American Institute of Physics. [S0021-8979(00)01807-7].
publishDate 2000
dc.date.none.fl_str_mv 2000
2000-04-01
2000
2000-04-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59233
url https://hdl.handle.net/20.500.14352/59233
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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