Cita APA

Martil De La Plaza, I., & González Díaz, G. (2000). High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices.

Citación estilo Chicago

Martil De La Plaza, Ignacio, y Germán González Díaz. High-quality Si-implanted In0.53Ga0.47As Epitaxial Layers and Their Application to N(+)p Junction Devices. 2000.

Cita MLA

Martil De La Plaza, Ignacio, y Germán González Díaz. High-quality Si-implanted In0.53Ga0.47As Epitaxial Layers and Their Application to N(+)p Junction Devices. 2000.