Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

Producción Científica

Detalles Bibliográficos
Autores: Marqués Cuesta, Luis Alberto, Aboy Cebrián, María, Dudeck, Karleen J., Botton, Gianluigi A., Knights, Andrew P., Gwilliam, Russell M.
Tipo de recurso: artículo
Fecha de publicación:2014
País:España
Institución:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/28616
Acceso en línea:https://doi.org/10.1063/1.4871538
http://uvadoc.uva.es/handle/10324/28616
Access Level:acceso abierto
Palabra clave:Atomistic model
Silicon
Silicio
id ES_5bd55d06b5cc62dfbcd6a97706b3f89b
oai_identifier_str oai:uvadoc.uva.es:10324/28616
network_acronym_str ES
network_name_str España
repository_id_str
spelling Modeling and experimental characterization of stepped and v-shaped {311} defects in siliconMarqués Cuesta, Luis AlbertoAboy Cebrián, MaríaDudeck, Karleen J.Botton, Gianluigi A.Knights, Andrew P.Gwilliam, Russell M.Atomistic modelSiliconSilicioProducción CientíficaWe propose an atomistic model to describe extended {311} defects in silicon. It is based on the combination of interstitial and bond defect chains. The model is able to accurately reproduce not only planar {311} defects but also defect structures that show steps, bends, or both. We use molecular dynamics techniques to show that these interstitial and bond defect chains spontaneously transform into extended {311} defects. Simulations are validated by comparing with precise experimental measurements on actual {311} defects. The excellent agreement between the simulated and experimentally derived structures, regarding individual atomic positions and shape of the distinct structural {311} defect units, provides strong evidence for the robustness of the proposed model.Ministerio de Ciencia e Innovación (Proyect TEC2011-27701)AIP Publishing2014info:eu-repo/semantics/articleapplication/pdfhttps://doi.org/10.1063/1.4871538http://uvadoc.uva.es/handle/10324/28616reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidIngléshttp://aip.scitation.org/doi/full/10.1063/1.4871538info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0/oai:uvadoc.uva.es:10324/286162026-06-13T12:44:47Z
dc.title.none.fl_str_mv Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
title Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
spellingShingle Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
Marqués Cuesta, Luis Alberto
Atomistic model
Silicon
Silicio
title_short Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
title_full Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
title_fullStr Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
title_full_unstemmed Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
title_sort Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
dc.creator.none.fl_str_mv Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
Dudeck, Karleen J.
Botton, Gianluigi A.
Knights, Andrew P.
Gwilliam, Russell M.
author Marqués Cuesta, Luis Alberto
author_facet Marqués Cuesta, Luis Alberto
Aboy Cebrián, María
Dudeck, Karleen J.
Botton, Gianluigi A.
Knights, Andrew P.
Gwilliam, Russell M.
author_role author
author2 Aboy Cebrián, María
Dudeck, Karleen J.
Botton, Gianluigi A.
Knights, Andrew P.
Gwilliam, Russell M.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Atomistic model
Silicon
Silicio
topic Atomistic model
Silicon
Silicio
description Producción Científica
publishDate 2014
dc.date.none.fl_str_mv 2014
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://doi.org/10.1063/1.4871538
http://uvadoc.uva.es/handle/10324/28616
url https://doi.org/10.1063/1.4871538
http://uvadoc.uva.es/handle/10324/28616
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://aip.scitation.org/doi/full/10.1063/1.4871538
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869408842687709184
score 15,300719

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