Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverage

We report an investigation of the electronic band structure of the SixSn(1−x)/Si(111)−(√3×√3)R30° solid solution using angle-resolved photoemission. This reconstruction was studied in the coverage range between 0.15 and 0.40 monolayers at room and low temperature, with special emphasis on the analys...

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Autores: Lobo-Checa, Jorge, Tejeda, A., Mugarza, Aitor, Michel, Enrique G.
Tipo de documento: artigo
Estado:Versão publicada
Data de publicação:2003
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositório:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/244567
Acesso em linha:http://hdl.handle.net/10261/244567
Access Level:Acceso aberto
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spelling Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverageLobo-Checa, JorgeTejeda, A.Mugarza, AitorMichel, Enrique G.We report an investigation of the electronic band structure of the SixSn(1−x)/Si(111)−(√3×√3)R30° solid solution using angle-resolved photoemission. This reconstruction was studied in the coverage range between 0.15 and 0.40 monolayers at room and low temperature, with special emphasis on the analysis of the symmetry and morphology of the surface states and the metallic character as a function of temperature and coverage. While there is no indication of a (3×3) pattern at low temperature with structural techniques, strikingly clear features of this phase are found in the valence band analysis for a coverage of 0.33 ML. We present also an analysis of the influence of the Si intermixing in the surface-state behavior and metallic character.We acknowledge financial support from MCyT (Spain) under Grant No. BFM-2001-0244 and from Comunidad de Madrid (Spain) under Grant No. 07N/0022/2002. The experiments performed at HASYLAB were supported by the IHP, Contract No. HPRI-CT-1999-00040, of the European Commission.Peer reviewedAmerican Physical SocietyMinisterio de Ciencia y Tecnología (España)Comunidad de MadridEuropean CommissionConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202120212003info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/244567reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttps://doi.org/10.1103/PhysRevB.68.235332Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2445672026-05-22T06:33:51Z
dc.title.none.fl_str_mv Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverage
title Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverage
spellingShingle Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverage
Lobo-Checa, Jorge
title_short Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverage
title_full Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverage
title_fullStr Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverage
title_full_unstemmed Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverage
title_sort Electronic structure of Sn/Si(111)- (√3×√3) R 30° as a function of Sn coverage
dc.creator.none.fl_str_mv Lobo-Checa, Jorge
Tejeda, A.
Mugarza, Aitor
Michel, Enrique G.
author Lobo-Checa, Jorge
author_facet Lobo-Checa, Jorge
Tejeda, A.
Mugarza, Aitor
Michel, Enrique G.
author_role author
author2 Tejeda, A.
Mugarza, Aitor
Michel, Enrique G.
author2_role author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia y Tecnología (España)
Comunidad de Madrid
European Commission
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description We report an investigation of the electronic band structure of the SixSn(1−x)/Si(111)−(√3×√3)R30° solid solution using angle-resolved photoemission. This reconstruction was studied in the coverage range between 0.15 and 0.40 monolayers at room and low temperature, with special emphasis on the analysis of the symmetry and morphology of the surface states and the metallic character as a function of temperature and coverage. While there is no indication of a (3×3) pattern at low temperature with structural techniques, strikingly clear features of this phase are found in the valence band analysis for a coverage of 0.33 ML. We present also an analysis of the influence of the Si intermixing in the surface-state behavior and metallic character.
publishDate 2003
dc.date.none.fl_str_mv 2003
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/244567
url http://hdl.handle.net/10261/244567
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://doi.org/10.1103/PhysRevB.68.235332
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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