Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs

In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-kappa and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is fo...

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Detalles Bibliográficos
Autores: Feijoo, Pedro Carlos, Kauerauf, Thomas, Toledano-Luque, María, Togo, Misuhiro, San Andrés Serrano, Enrique, Groeseneken, Guido.
Tipo de recurso: artículo
Fecha de publicación:2012
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/98211.2
Acceso en línea:https://hdl.handle.net/20.500.14352/98211.2
Access Level:acceso abierto
Palabra clave:621.38
FinFET
High-kappa
Reliability
Scavenging
Time-dependent dielectric breakdown (TDDB)
Electrónica (Física)
2203 Electrónica
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oai_identifier_str oai:docta.ucm.es:20.500.14352/98211.2
network_acronym_str ES
network_name_str España
repository_id_str
spelling Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETsFeijoo, Pedro CarlosKauerauf, ThomasToledano-Luque, MaríaTogo, MisuhiroSan Andrés Serrano, EnriqueGroeseneken, Guido.621.38FinFETHigh-kappaReliabilityScavengingTime-dependent dielectric breakdown (TDDB)Electrónica (Física)2203 ElectrónicaIn this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-kappa and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 10(-8) cm(2), implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents.Institute of Electrical and Electronics EngineersUniversidad Complutense de Madrid20122012-01-0120122012-01-01journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/98211.2reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)InglésengTEC2010-18051 Not available Not availableopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/98211.22026-06-02T12:44:21Z
dc.title.none.fl_str_mv Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
title Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
spellingShingle Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
Feijoo, Pedro Carlos
621.38
FinFET
High-kappa
Reliability
Scavenging
Time-dependent dielectric breakdown (TDDB)
Electrónica (Física)
2203 Electrónica
title_short Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
title_full Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
title_fullStr Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
title_full_unstemmed Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
title_sort Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
dc.creator.none.fl_str_mv Feijoo, Pedro Carlos
Kauerauf, Thomas
Toledano-Luque, María
Togo, Misuhiro
San Andrés Serrano, Enrique
Groeseneken, Guido.
author Feijoo, Pedro Carlos
author_facet Feijoo, Pedro Carlos
Kauerauf, Thomas
Toledano-Luque, María
Togo, Misuhiro
San Andrés Serrano, Enrique
Groeseneken, Guido.
author_role author
author2 Kauerauf, Thomas
Toledano-Luque, María
Togo, Misuhiro
San Andrés Serrano, Enrique
Groeseneken, Guido.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 621.38
FinFET
High-kappa
Reliability
Scavenging
Time-dependent dielectric breakdown (TDDB)
Electrónica (Física)
2203 Electrónica
topic 621.38
FinFET
High-kappa
Reliability
Scavenging
Time-dependent dielectric breakdown (TDDB)
Electrónica (Física)
2203 Electrónica
description In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-kappa and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 10(-8) cm(2), implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents.
publishDate 2012
dc.date.none.fl_str_mv 2012
2012-01-01
2012
2012-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/98211.2
url https://hdl.handle.net/20.500.14352/98211.2
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv TEC2010-18051 Not available Not available
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869408258617245696
score 15.812429

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