Simulations of Statistical Variability in n-type FinFET, Nanowire and Nanosheet FETs
Four sources of variability, metal grain granularity (MGG), line-edge roughness (LER), gate-edge roughness (GER), and random discrete dopants (RDD), affecting the performance of state-of-the-art FinFET, nanosheet (NS), and nanowire (NW) FETs, are analysed via our in-house 3D finite-element drift-dif...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universidad de Santiago de Compostela (USC) |
| Repositorio: | Minerva. Repositorio Institucional de la Universidad de Santiago de Compostela |
| Idioma: | inglés |
| OAI Identifier: | oai:minerva.usc.gal:10347/38743 |
| Acceso en línea: | https://hdl.handle.net/10347/38743 |
| Access Level: | acceso abierto |
| Palabra clave: | Drift-diffusion FinFET Nanosheet Nanowire Monte Carlo Schrodinger Quantum Correction Variability 2203 Electrónica |
| Sumario: | Four sources of variability, metal grain granularity (MGG), line-edge roughness (LER), gate-edge roughness (GER), and random discrete dopants (RDD), affecting the performance of state-of-the-art FinFET, nanosheet (NS), and nanowire (NW) FETs, are analysed via our in-house 3D finite-element drift-diffusion/Monte Carlo simulator that includes 2D Schrödinger equation quantum corrections. The MGG and LER are the sources of variability that influence device performance of the three multi-gate architectures the most. The FinFET and the NS FET are similarly affected by the MGG variations with threshold voltage and on-current standard deviations significantly lower (at least 20 %) than those of the NW FET. The LER variability has a negligible influence in the NS FET performance with σ VT values around 12 and 42 times lower than those of the FinFET and the NW FET. The three architectures are equally affected by the RDD ( σVT = 8 mV) and minimally influenced by the GER ( σVT≈4 mV). The variability of NS FETs makes them strong candidates to replace FinFETs. |
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