Horizontally patterned Si nanowire growth for nanomechanical devices

We report a method to pattern horizontal vapor-liquid-solid growth of Si nanowires at vertical sidewalls of Si microstructures. The method allows one to produce either single nanowire structures or well-ordered nanowire arrays with predefined growth positions, thus enabling a practical development o...

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Detalles Bibliográficos
Autores: Fernández-Regúlez, Marta, Sansa Perna, Marc, Serra-García, M., Gil-Santos, Eduardo, Tamayo de Miguel, Francisco Javier, Perez Murano, Francesc X., San Paulo, Álvaro
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2013
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/132658
Acceso en línea:http://hdl.handle.net/10261/132658
Access Level:acceso abierto
Descripción
Sumario:We report a method to pattern horizontal vapor-liquid-solid growth of Si nanowires at vertical sidewalls of Si microstructures. The method allows one to produce either single nanowire structures or well-ordered nanowire arrays with predefined growth positions, thus enabling a practical development of nanomechanical devices that exploit the singular properties of Si nanowires. In particular, we demonstrate the fabrication of doubly clamped nanowire resonators and resonator arrays whose mechanical resonances can be measured by optical or electrical readout. We also show that the fabrication method enables the electrical readout of the resonant mode splitting of nanowire resonators in the VHF range, which allows the application of such an effect for enhanced nanomechanical sensing with nanowire resonators. © 2013 IOP Publishing Ltd.

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