Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET

Latching Current Limiters (LCLs) provide individual over-current protection to payloads protecting the satellite power bus. Under an overload, they limit the maximum current for a certain time. After this time, if the failure persists, the LCL isolate it from the power bus. The keystone of the LCLs...

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Autores: López Antuña, Abraham|||0000-0002-8978-861X, Fernández Miaja, Pablo|||0000-0002-4419-1940, Arias Pérez de Azpeitia, Manuel|||0000-0002-0897-8594, Fernández González, Arturo José
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universidad de Oviedo (UNIOVI)
Repositorio:RUO. Repositorio Institucional de la Universidad de Oviedo
Idioma:inglés
OAI Identifier:oai:digibuo.uniovi.es:10651/63286
Acceso en línea:http://hdl.handle.net/10651/63286
https://dx.doi.org/10.1109/JESTPE.2022.3163585
Access Level:acceso abierto
Palabra clave:LCL
Current protection
Wide bandgap devices
Satellite
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spelling Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFETLópez Antuña, Abraham|||0000-0002-8978-861XFernández Miaja, Pablo|||0000-0002-4419-1940Arias Pérez de Azpeitia, Manuel|||0000-0002-0897-8594Fernández González, Arturo JoséLCLCurrent protectionWide bandgap devicesSatelliteLatching Current Limiters (LCLs) provide individual over-current protection to payloads protecting the satellite power bus. Under an overload, they limit the maximum current for a certain time. After this time, if the failure persists, the LCL isolate it from the power bus. The keystone of the LCLs is the current-limiting transistor. In traditional LCL designs, P-MOSFETs are used as the main current limiting device. However, in this work a complete LCL based on N-MOSFETs is presented. This change involves a complete redesign of the control circuitry. of the LCL architecture. The use of Silicon Carbide (SiC) is explored to assess the possibility of operating at higher voltages and potentially at higher temperatures. The paper shows a complete LCL design based on a SiC N-MOSFET. The design is tested implementing a class 10 LCL (10 A as nominal current) for a bus voltage of 100 V, a limitation current of 12 A, and for a limitation time (trip-off time) of 1.5 ms.This work has been carried out by funding from the Spanish government through the RTI2018-099682-A-I00 project, the PID2021-127707OB-C21 project, the PRE2019-088425 grant, and from the European Space Agency (ESA) through the “SiC Latching Current Limiter Study” contract.IEEE20222022-01-01journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articlehttp://hdl.handle.net/10651/63286https://dx.doi.org/10.1109/JESTPE.2022.3163585reponame:RUO. Repositorio Institucional de la Universidad de Oviedoinstname:Universidad de Oviedo (UNIOVI)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:digibuo.uniovi.es:10651/632862026-06-07T06:38:51Z
dc.title.none.fl_str_mv Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET
title Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET
spellingShingle Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET
López Antuña, Abraham|||0000-0002-8978-861X
LCL
Current protection
Wide bandgap devices
Satellite
title_short Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET
title_full Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET
title_fullStr Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET
title_full_unstemmed Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET
title_sort Circuit proposal of a latching current limiter for space applications based on a SiC N-MOSFET
dc.creator.none.fl_str_mv López Antuña, Abraham|||0000-0002-8978-861X
Fernández Miaja, Pablo|||0000-0002-4419-1940
Arias Pérez de Azpeitia, Manuel|||0000-0002-0897-8594
Fernández González, Arturo José
author López Antuña, Abraham|||0000-0002-8978-861X
author_facet López Antuña, Abraham|||0000-0002-8978-861X
Fernández Miaja, Pablo|||0000-0002-4419-1940
Arias Pérez de Azpeitia, Manuel|||0000-0002-0897-8594
Fernández González, Arturo José
author_role author
author2 Fernández Miaja, Pablo|||0000-0002-4419-1940
Arias Pérez de Azpeitia, Manuel|||0000-0002-0897-8594
Fernández González, Arturo José
author2_role author
author
author
dc.subject.none.fl_str_mv LCL
Current protection
Wide bandgap devices
Satellite
topic LCL
Current protection
Wide bandgap devices
Satellite
description Latching Current Limiters (LCLs) provide individual over-current protection to payloads protecting the satellite power bus. Under an overload, they limit the maximum current for a certain time. After this time, if the failure persists, the LCL isolate it from the power bus. The keystone of the LCLs is the current-limiting transistor. In traditional LCL designs, P-MOSFETs are used as the main current limiting device. However, in this work a complete LCL based on N-MOSFETs is presented. This change involves a complete redesign of the control circuitry. of the LCL architecture. The use of Silicon Carbide (SiC) is explored to assess the possibility of operating at higher voltages and potentially at higher temperatures. The paper shows a complete LCL design based on a SiC N-MOSFET. The design is tested implementing a class 10 LCL (10 A as nominal current) for a bus voltage of 100 V, a limitation current of 12 A, and for a limitation time (trip-off time) of 1.5 ms.
publishDate 2022
dc.date.none.fl_str_mv 2022
2022-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10651/63286
https://dx.doi.org/10.1109/JESTPE.2022.3163585
url http://hdl.handle.net/10651/63286
https://dx.doi.org/10.1109/JESTPE.2022.3163585
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:RUO. Repositorio Institucional de la Universidad de Oviedo
instname:Universidad de Oviedo (UNIOVI)
instname_str Universidad de Oviedo (UNIOVI)
reponame_str RUO. Repositorio Institucional de la Universidad de Oviedo
collection RUO. Repositorio Institucional de la Universidad de Oviedo
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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