Spectroscopy studies of 4H-SiC

Calculations of the total dielectric functions and the optical bandgap energy (OBGE) of 4HSiC were performed by the full-potential linear muffin-tin-orbital method. The results are compared to spectroscopic ellipsometry dielectric measurements agreeing closely over in a wide range of energies. The o...

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Detalles Bibliográficos
Autores: Oliveira, A.C. de, Freitas Jr., J.A., Moore, W.J., Silva, A. Ferreira da, Pepe, I., Almeida, J. Souza de, Osório-Guillén, J.M., Ahuja, R., Persson, C., Järrendahl, K., Lindquist, O.P.A., Edwards, N.V., Wahab, Q.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2003
País:Brasil
Institución:Universidade de Brasília (UnB)
Repositorio:Repositório Institucional da UnB
Idioma:inglés
OAI Identifier:oai:repositorio.unb.br:10482/26099
Acceso en línea:http://repositorio.unb.br/handle/10482/26099
https://dx.doi.org/10.1590/S1516-14392003000100008
Access Level:acceso abierto
Palabra clave:Energia óptica
Material wide-bandgap
Polítipos sic
Simulação computacional
Descripción
Sumario:Calculations of the total dielectric functions and the optical bandgap energy (OBGE) of 4HSiC were performed by the full-potential linear muffin-tin-orbital method. The results are compared to spectroscopic ellipsometry dielectric measurements agreeing closely over in a wide range of energies. The obtained theoretical value of the (OBGE) agrees very closely with the measured ones obtained by transmission and photoacoustic spectroscopies at room temperature performed on 470 µm thick wafer and a 25 µm thick homoepitaxial layer of 4H-SiC samples grown (n-type, Siface) by hot wall CVD.

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