Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review. To access the final edited and published work see DOI:10.1021/acsami.8b02851.
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/117625 |
| Acceso en línea: | https://hdl.handle.net/2117/117625 https://dx.doi.org/10.1021/acsami.8b02851 |
| Access Level: | acceso abierto |
| Palabra clave: | Transistors Density-of-states High stability N-type OFET Semiconductor-dielectric interface Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors |
| Sumario: | This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review. To access the final edited and published work see DOI:10.1021/acsami.8b02851. |
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