Shedding light on the negative differential resistance effect observed in organic thin-film transistors

This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review. To access the final edited and published work see https://pubs.acs.org/doi/full/10.1021/acsa...

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Bibliographic Details
Authors: Ros Costals, Eloi|||0000-0002-1952-6614, Reig Canyelles, Marta, Voz Sánchez, Cristóbal|||0000-0002-0320-9606, Bagdziunas, Gintautas, Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X, Velasco Castrillo, Maria Dolores, Puigdollers i González, Joaquim|||0000-0002-1834-2565
Format: article
Publication Date:2020
Country:España
Institution:Universitat Politècnica de Catalunya (UPC)
Repository:UPCommons. Portal del coneixement obert de la UPC
Language:English
OAI Identifier:oai:upcommons.upc.edu:2117/329193
Online Access:https://hdl.handle.net/2117/329193
https://dx.doi.org/10.1021/acsaelm.0c00183
Access Level:Open access
Keyword:Transistors
Organic semiconductors
Organic field-effect transistor
OFET
Negative differential resistance
Density of states
Energy levels
NDR
Semiconductors orgànics
Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
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Summary:This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review. To access the final edited and published work see https://pubs.acs.org/doi/full/10.1021/acsaelm.0c00183

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