A compact charge ratio expression for the emitter delay of polysilicon emitter bipolar transistors
A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon to the charge stored in the single crystal part of the emitter of a polysilicon emitter bipolar transistor is derived. The solution is based on an existing comprehensive model which takes into account...
| Autores: | , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 1994 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/112401 |
| Acceso en línea: | https://hdl.handle.net/2117/112401 https://dx.doi.org/10.1109/16.275236 |
| Access Level: | acceso abierto |
| Palabra clave: | Bipolar transistors Elemental semiconductors Minority carriers Semiconductor device models Silicon Transistors bipolars Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors |
| Sumario: | A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon to the charge stored in the single crystal part of the emitter of a polysilicon emitter bipolar transistor is derived. The solution is based on an existing comprehensive model which takes into account the interfacial oxide and an arbitrary number of grains in the polysilicon layer. The emitter charge partition in polysilicon and single crystal emitter components is summarized in contour plots for constant values of the ratio. |
|---|