Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it...

Descripción completa

Detalles Bibliográficos
Autores: Gomila Lluch, Gabriel, Bulashenko, Oleg, Rubí Capaceti, José Miguel, Kochelap, V. A. (Viacheslav Aleksandrovich)
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:1998
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/22078
Acceso en línea:https://hdl.handle.net/2445/22078
Access Level:acceso abierto
Palabra clave:Semiconductors
Soroll electrònic
Díodes
Transistors
Camps elèctrics
Microelectrònica
Electronic noise
Diodes
Electric fields
Microelectronics
id ES_4f3b7f854797e912dfd4ddb8bb8d09e8
oai_identifier_str oai:recercat.cat:2445/22078
network_acronym_str ES
network_name_str España
repository_id_str
spelling Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approachGomila Lluch, GabrielBulashenko, OlegRubí Capaceti, José MiguelKochelap, V. A. (Viacheslav Aleksandrovich)SemiconductorsSoroll electrònicDíodesTransistorsCamps elèctricsMicroelectrònicaSemiconductorsElectronic noiseDiodesTransistorsElectric fieldsMicroelectronicsWe present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentrationAmerican Institute of Physics201220121998info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion9 p.application/pdfhttps://hdl.handle.net/2445/22078Articles publicats en revistes (Física de la Matèria Condensada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.367023Journal of Applied Physics, 1998, vol. 83, núm. 5, p. 2610-2618http://dx.doi.org/10.1063/1.367023(c) American Institute of Physics, 1998info:eu-repo/semantics/openAccessoai:recercat.cat:2445/220782026-05-29T05:05:01Z
dc.title.none.fl_str_mv Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
title Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
spellingShingle Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
Gomila Lluch, Gabriel
Semiconductors
Soroll electrònic
Díodes
Transistors
Camps elèctrics
Microelectrònica
Semiconductors
Electronic noise
Diodes
Transistors
Electric fields
Microelectronics
title_short Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
title_full Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
title_fullStr Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
title_full_unstemmed Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
title_sort Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
dc.creator.none.fl_str_mv Gomila Lluch, Gabriel
Bulashenko, Oleg
Rubí Capaceti, José Miguel
Kochelap, V. A. (Viacheslav Aleksandrovich)
author Gomila Lluch, Gabriel
author_facet Gomila Lluch, Gabriel
Bulashenko, Oleg
Rubí Capaceti, José Miguel
Kochelap, V. A. (Viacheslav Aleksandrovich)
author_role author
author2 Bulashenko, Oleg
Rubí Capaceti, José Miguel
Kochelap, V. A. (Viacheslav Aleksandrovich)
author2_role author
author
author
dc.subject.none.fl_str_mv Semiconductors
Soroll electrònic
Díodes
Transistors
Camps elèctrics
Microelectrònica
Semiconductors
Electronic noise
Diodes
Transistors
Electric fields
Microelectronics
topic Semiconductors
Soroll electrònic
Díodes
Transistors
Camps elèctrics
Microelectrònica
Semiconductors
Electronic noise
Diodes
Transistors
Electric fields
Microelectronics
description We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration
publishDate 1998
dc.date.none.fl_str_mv 1998
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/22078
url https://hdl.handle.net/2445/22078
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.367023
Journal of Applied Physics, 1998, vol. 83, núm. 5, p. 2610-2618
http://dx.doi.org/10.1063/1.367023
dc.rights.none.fl_str_mv (c) American Institute of Physics, 1998
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 1998
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 9 p.
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Física de la Matèria Condensada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869407806735515648
score 15,811543

Similares en LA Referencia