Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it...
| Authors: | , , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 1998 |
| Country: | España |
| Institution: | Universidad de Barcelona |
| Repository: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/22078 |
| Online Access: | https://hdl.handle.net/2445/22078 |
| Access Level: | Open access |
| Keyword: | Semiconductors Soroll electrònic Díodes Transistors Camps elèctrics Microelectrònica Electronic noise Diodes Electric fields Microelectronics |
| Summary: | We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration |
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