Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach
A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions des...
| Autores: | , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2000 |
| País: | España |
| Recursos: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/22099 |
| Acesso em linha: | https://hdl.handle.net/2445/22099 |
| Access Level: | acceso abierto |
| Palavra-chave: | Díodes Soroll Camps elèctrics Semiconductors Mètode de Montecarlo Electrònica de l'estat sòlid Microelectrònica Diodes Noise Electric fields Monte Carlo method Solid state electronics Microelectronics |
| Resumo: | A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained |
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