Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
3 pages, 5 figures.-- PACS: 78.66.Fd; 73.20.Dx; 73.50.Mx; 68.35.Ct; 78.30.Fs; 71.18.+y
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1999 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/21551 |
| Acceso en línea: | http://hdl.handle.net/10261/21551 |
| Access Level: | acceso abierto |
| Palabra clave: | Indium compounds III-V semiconductors Semiconductor quantum dots Size effects |
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Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structuresPrieto, Jose AntonioArmelles Reig, GasparGroenen, J.Carles, R.Indium compoundsIII-V semiconductorsSemiconductor quantum dotsSize effects3 pages, 5 figures.-- PACS: 78.66.Fd; 73.20.Dx; 73.50.Mx; 68.35.Ct; 78.30.Fs; 71.18.+yThe optical transitions of uncapped and capped InAs/InP self-assembled quantum dot structures in the energy range of the bulk InAs E1 transition are studied using modulation spectroscopy and Raman scattering. Islands and wetting layer exhibit one and two features, respectively. The deformation potential theory and the single band effective mass approximation account for the island-related feature successfully in a wide island-height range (3–7 nm). These models also explain the existence of the highest energy wetting layer related feature, but not of the lowest energy one.This work has been supported by the Spanish CICYT under Grant No. MAT95-0966-C02-01 and by the French– Spanish program 96/240 B.Peer reviewedAmerican Institute of Physics201020101999info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_650171791 bytesapplication/pdfhttp://hdl.handle.net/10261/21551reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.122963info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/215512026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures |
| title |
Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures |
| spellingShingle |
Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures Prieto, Jose Antonio Indium compounds III-V semiconductors Semiconductor quantum dots Size effects |
| title_short |
Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures |
| title_full |
Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures |
| title_fullStr |
Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures |
| title_full_unstemmed |
Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures |
| title_sort |
Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures |
| dc.creator.none.fl_str_mv |
Prieto, Jose Antonio Armelles Reig, Gaspar Groenen, J. Carles, R. |
| author |
Prieto, Jose Antonio |
| author_facet |
Prieto, Jose Antonio Armelles Reig, Gaspar Groenen, J. Carles, R. |
| author_role |
author |
| author2 |
Armelles Reig, Gaspar Groenen, J. Carles, R. |
| author2_role |
author author author |
| dc.subject.none.fl_str_mv |
Indium compounds III-V semiconductors Semiconductor quantum dots Size effects |
| topic |
Indium compounds III-V semiconductors Semiconductor quantum dots Size effects |
| description |
3 pages, 5 figures.-- PACS: 78.66.Fd; 73.20.Dx; 73.50.Mx; 68.35.Ct; 78.30.Fs; 71.18.+y |
| publishDate |
1999 |
| dc.date.none.fl_str_mv |
1999 2010 2010 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 |
| format |
article |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/21551 |
| url |
http://hdl.handle.net/10261/21551 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
http://dx.doi.org/10.1063/1.122963 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
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71791 bytes application/pdf |
| dc.publisher.none.fl_str_mv |
American Institute of Physics |
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American Institute of Physics |
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reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
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Consejo Superior de Investigaciones Científicas (CSIC) |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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1869407741365190656 |
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15.812429 |