Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures

3 pages, 5 figures.-- PACS: 78.66.Fd; 73.20.Dx; 73.50.Mx; 68.35.Ct; 78.30.Fs; 71.18.+y

Detalles Bibliográficos
Autores: Prieto, Jose Antonio, Armelles Reig, Gaspar, Groenen, J., Carles, R.
Tipo de recurso: artículo
Fecha de publicación:1999
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/21551
Acceso en línea:http://hdl.handle.net/10261/21551
Access Level:acceso abierto
Palabra clave:Indium compounds
III-V semiconductors
Semiconductor quantum dots
Size effects
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spelling Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structuresPrieto, Jose AntonioArmelles Reig, GasparGroenen, J.Carles, R.Indium compoundsIII-V semiconductorsSemiconductor quantum dotsSize effects3 pages, 5 figures.-- PACS: 78.66.Fd; 73.20.Dx; 73.50.Mx; 68.35.Ct; 78.30.Fs; 71.18.+yThe optical transitions of uncapped and capped InAs/InP self-assembled quantum dot structures in the energy range of the bulk InAs E1 transition are studied using modulation spectroscopy and Raman scattering. Islands and wetting layer exhibit one and two features, respectively. The deformation potential theory and the single band effective mass approximation account for the island-related feature successfully in a wide island-height range (3–7 nm). These models also explain the existence of the highest energy wetting layer related feature, but not of the lowest energy one.This work has been supported by the Spanish CICYT under Grant No. MAT95-0966-C02-01 and by the French– Spanish program 96/240 B.Peer reviewedAmerican Institute of Physics201020101999info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_650171791 bytesapplication/pdfhttp://hdl.handle.net/10261/21551reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1063/1.122963info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/215512026-05-22T06:33:51Z
dc.title.none.fl_str_mv Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
title Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
spellingShingle Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
Prieto, Jose Antonio
Indium compounds
III-V semiconductors
Semiconductor quantum dots
Size effects
title_short Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
title_full Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
title_fullStr Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
title_full_unstemmed Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
title_sort Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures
dc.creator.none.fl_str_mv Prieto, Jose Antonio
Armelles Reig, Gaspar
Groenen, J.
Carles, R.
author Prieto, Jose Antonio
author_facet Prieto, Jose Antonio
Armelles Reig, Gaspar
Groenen, J.
Carles, R.
author_role author
author2 Armelles Reig, Gaspar
Groenen, J.
Carles, R.
author2_role author
author
author
dc.subject.none.fl_str_mv Indium compounds
III-V semiconductors
Semiconductor quantum dots
Size effects
topic Indium compounds
III-V semiconductors
Semiconductor quantum dots
Size effects
description 3 pages, 5 figures.-- PACS: 78.66.Fd; 73.20.Dx; 73.50.Mx; 68.35.Ct; 78.30.Fs; 71.18.+y
publishDate 1999
dc.date.none.fl_str_mv 1999
2010
2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
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dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/21551
url http://hdl.handle.net/10261/21551
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1063/1.122963
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 71791 bytes
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dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
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