Local Tuning of the Epsilon-Near-Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing
[EN] The ability for locally tuning devices in photonic integrated circuits could be an essential function for a wide range of applications requiring reconfigurable photonics. This work demonstrates the application of postgrowth reactive laser annealing to selectively tune the optical properties of...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universitat Politècnica de València (UPV) |
| Repositorio: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglés |
| OAI Identifier: | oai:riunet.upv.es:10251/220099 |
| Acceso en línea: | https://riunet.upv.es/handle/10251/220099 |
| Access Level: | acceso abierto |
| Palabra clave: | Epsilon-near-zero Hybrid silicon waveguide Indium tin oxide Laser annealing Silicon photonics Transparent conducting oxides |
| Sumario: | [EN] The ability for locally tuning devices in photonic integrated circuits could be an essential function for a wide range of applications requiring reconfigurable photonics. This work demonstrates the application of postgrowth reactive laser annealing to selectively tune the optical properties of tin-doped indium oxide (ITO) patches integrated in silicon waveguides. ITO stands out due to its distinctive ability to operate in the epsilon-near-zero (ENZ) regime at near-infrared wavelengths. The precise local tuning of the ENZ wavelength in ITO/Si hybrid waveguides by controlling the laser annealing fluence is demonstrated. This technique uniquely allows for the customization of optical constants at critical telecom wavelengths. The findings present a powerful and adaptable method to exploit the exceptional qualities of ITO and, by extension, other transparent conducting oxides, paving the way for the functional diversification of hybrid photonic devices on a singular-silicon chip. |
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