Ultrafast all-optical phase switching enabled by epsilon-near-zero materials in silicon
[EN] Transparent conducting oxides (TCOs) have emerged as both particularly appealing epsilon-near-zero (ENZ) materials and remarkable candidates for the design and fabrication of active silicon nanophotonic devices. However, the leverage of TCO's ultrafast nonlinearities requires precise c...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Universitat Politècnica de València (UPV) |
| Repositorio: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglés |
| OAI Identifier: | oai:riunet.upv.es:10251/195460 |
| Acceso en línea: | https://riunet.upv.es/handle/10251/195460 |
| Access Level: | acceso abierto |
| Palabra clave: | All-optical Phase switching Epsilon-near-zero Silicon photonics TEORÍA DE LA SEÑAL Y COMUNICACIONES |
| Sumario: | [EN] Transparent conducting oxides (TCOs) have emerged as both particularly appealing epsilon-near-zero (ENZ) materials and remarkable candidates for the design and fabrication of active silicon nanophotonic devices. However, the leverage of TCO's ultrafast nonlinearities requires precise control of the intricate physical mechanisms that take place upon excitation. Here we investigate such behavior for ultrafast all-optical phase switching in hybrid TCO-silicon waveguides through numerical simulation. The model is driven from the framework of intraband-transition-induced optical nonlinearity. Transient evolution is studied with a phenomenological two-temperature model. Our results reveal the best compromise between energy consumption, insertion losses and phase change per unit length for enabling ultrafast switching times below 100 fs and compact active lengths in the order of several micrometers. |
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