Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to se...

Full description

Bibliographic Details
Authors: Ros Costals, Eloi|||0000-0002-1952-6614, Puigdollers i González, Joaquim|||0000-0002-1834-2565, Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X, Voz Sánchez, Cristóbal|||0000-0002-0320-9606
Format: article
Publication Date:2020
Country:España
Institution:Universitat Politècnica de Catalunya (UPC)
Repository:UPCommons. Portal del coneixement obert de la UPC
Language:English
OAI Identifier:oai:upcommons.upc.edu:2117/175469
Online Access:https://hdl.handle.net/2117/175469
https://dx.doi.org/10.1109/JEDS.2020.2965213
Access Level:Open access
Keyword:Thin films
OTFT
NDR
Organic semiconductors
Density of states
Capes fines
Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
Description
Summary:© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Similar Items