A rapid, low-cost, and scalable technique for printing state-of-the-art organic field-effcet transistors

In the last few years exciting advances have been achieved in developing printing techniques for organic semiconductors, and impressive mobility values have been reported for the resulting organic field-effect transistors (OFETs). However, not all these techniques are scalable and some of them requi...

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Detalles Bibliográficos
Autores: Temiño, Inés, Del Pozo León, Freddy, Ajayakumar, M.R., Galindo Lorente, Sergi, Puigdollers i González, Joaquim|||0000-0002-1834-2565, Mas Torrent, Marta
Tipo de recurso: artículo
Fecha de publicación:2016
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/91076
Acceso en línea:https://hdl.handle.net/2117/91076
https://dx.doi.org/10.1002/admt.201600090
Access Level:acceso abierto
Palabra clave:Transistors
High mobility
Organic field-effect transistor
Organic semiconductor
Printing
Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
Descripción
Sumario:In the last few years exciting advances have been achieved in developing printing techniques for organic semiconductors, and impressive mobility values have been reported for the resulting organic field-effect transistors (OFETs). However, not all these techniques are scalable and some of them require additional crystallization steps. This study reports on the fabrication of OFETs employing blends of four benchmark organic semiconductors with polystyrene and demonstrates that applying the same formulation and experimental conditions for printing them, highly reproducible and uniform crystalline films exhibiting high OFET performance are successfully achieved. It is noted that the mobility values achieved here are not the highest reported for the studied materials; however, they are state-of-the-art values and could be regarded as exceptional considering the low cost and fast speed of the fabrication process involved here.