Characterization of a 100 nm RADFET as a proton beam detector

The RADFET VT06 developed by Varadis (Cork, Ireland), which is aimed at high-dose applications, mainly for spacecraft missions, has been characterized by low- and high-energy proton beams at two different facilities, the Accelerator National Centre (Sevilla, Spain) and the Paul Scherrer Institute (P...

Descripción completa

Detalles Bibliográficos
Autores: Moreno Pérez, Juan Antonio, Ruiz García, Isidoro, Duane, Russell, Martín Holgado, Pedro, Morvaj, Ljiljana, Vasovic, Nikola, Hajdas, Wojtek, Morilla García, Yolanda, Carvajal Rodríguez, Miguel Ángel
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:dnet:idus________::3d4ebd26ee63e8283945f76d65fb6d71
Acceso en línea:https://hdl.handle.net/11441/186855
https://doi.org/10.3390/s26010202
Access Level:acceso abierto
Palabra clave:Radiation detector
RADFET
Unbiased
Proton beams
Dosimetry
id ES_39d5142f2f08fea0c58de514bdb7531c
oai_identifier_str oai:dnet:idus________::3d4ebd26ee63e8283945f76d65fb6d71
network_acronym_str ES
network_name_str España
repository_id_str
spelling Characterization of a 100 nm RADFET as a proton beam detectorMoreno Pérez, Juan AntonioRuiz García, IsidoroDuane, RussellMartín Holgado, PedroMorvaj, LjiljanaVasovic, NikolaHajdas, WojtekMorilla García, YolandaCarvajal Rodríguez, Miguel ÁngelRadiation detectorRADFETUnbiasedProton beamsDosimetryThe RADFET VT06 developed by Varadis (Cork, Ireland), which is aimed at high-dose applications, mainly for spacecraft missions, has been characterized by low- and high-energy proton beams at two different facilities, the Accelerator National Centre (Sevilla, Spain) and the Paul Scherrer Institute (PSI) located in Villigen (Switzerland), using a reader unit system developed by the University of Granada (Spain). The devices have been characterized with proton energies of 1, 2, 3, 150, and 230 MeV, with accumulated doses from 130 to 512 Gy, where the RADFET was unbiased during the irradiation while the source voltage was measured before and after irradiation to monitor the radiation dose. Excellent linearity has been obtained with a minimum correlation factor R2 of 0.996, with a sensitivity that can vary from (0.691 ± 0.007) mV/Gy for 1 MeV to (1.143 ± 0.023) mV/Gy for 230 MeV without any build-up layer. An excellent stability was found in the studied cases, with dispersion being lower than 4% after a dose accumulation higher than 500 and 200 Gy for protons of 1 and 3 MeV, respectively. The detectors demonstrated linear responses, very low sensitivity dispersion per set of samples, and excellent stability after irradiation. This shows that, with an appropriate readout system, the RADFET can become an excellent system for high-dose proton beams.MDPIFísica Aplicada IMinisterio de Ciencia, Innovación y Universidades (MICIU). EspañaEuropean Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER)2025info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/186855https://doi.org/10.3390/s26010202reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésSensors, 26 (1), 202. PID2022-137543NB-I00101008126https://www.mdpi.com/1424-8220/26/1/202info:eu-repo/semantics/openAccessoai:dnet:idus________::3d4ebd26ee63e8283945f76d65fb6d712026-06-17T12:51:07Z
dc.title.none.fl_str_mv Characterization of a 100 nm RADFET as a proton beam detector
title Characterization of a 100 nm RADFET as a proton beam detector
spellingShingle Characterization of a 100 nm RADFET as a proton beam detector
Moreno Pérez, Juan Antonio
Radiation detector
RADFET
Unbiased
Proton beams
Dosimetry
title_short Characterization of a 100 nm RADFET as a proton beam detector
title_full Characterization of a 100 nm RADFET as a proton beam detector
title_fullStr Characterization of a 100 nm RADFET as a proton beam detector
title_full_unstemmed Characterization of a 100 nm RADFET as a proton beam detector
title_sort Characterization of a 100 nm RADFET as a proton beam detector
dc.creator.none.fl_str_mv Moreno Pérez, Juan Antonio
Ruiz García, Isidoro
Duane, Russell
Martín Holgado, Pedro
Morvaj, Ljiljana
Vasovic, Nikola
Hajdas, Wojtek
Morilla García, Yolanda
Carvajal Rodríguez, Miguel Ángel
author Moreno Pérez, Juan Antonio
author_facet Moreno Pérez, Juan Antonio
Ruiz García, Isidoro
Duane, Russell
Martín Holgado, Pedro
Morvaj, Ljiljana
Vasovic, Nikola
Hajdas, Wojtek
Morilla García, Yolanda
Carvajal Rodríguez, Miguel Ángel
author_role author
author2 Ruiz García, Isidoro
Duane, Russell
Martín Holgado, Pedro
Morvaj, Ljiljana
Vasovic, Nikola
Hajdas, Wojtek
Morilla García, Yolanda
Carvajal Rodríguez, Miguel Ángel
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Física Aplicada I
Ministerio de Ciencia, Innovación y Universidades (MICIU). España
European Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER)
dc.subject.none.fl_str_mv Radiation detector
RADFET
Unbiased
Proton beams
Dosimetry
topic Radiation detector
RADFET
Unbiased
Proton beams
Dosimetry
description The RADFET VT06 developed by Varadis (Cork, Ireland), which is aimed at high-dose applications, mainly for spacecraft missions, has been characterized by low- and high-energy proton beams at two different facilities, the Accelerator National Centre (Sevilla, Spain) and the Paul Scherrer Institute (PSI) located in Villigen (Switzerland), using a reader unit system developed by the University of Granada (Spain). The devices have been characterized with proton energies of 1, 2, 3, 150, and 230 MeV, with accumulated doses from 130 to 512 Gy, where the RADFET was unbiased during the irradiation while the source voltage was measured before and after irradiation to monitor the radiation dose. Excellent linearity has been obtained with a minimum correlation factor R2 of 0.996, with a sensitivity that can vary from (0.691 ± 0.007) mV/Gy for 1 MeV to (1.143 ± 0.023) mV/Gy for 230 MeV without any build-up layer. An excellent stability was found in the studied cases, with dispersion being lower than 4% after a dose accumulation higher than 500 and 200 Gy for protons of 1 and 3 MeV, respectively. The detectors demonstrated linear responses, very low sensitivity dispersion per set of samples, and excellent stability after irradiation. This shows that, with an appropriate readout system, the RADFET can become an excellent system for high-dose proton beams.
publishDate 2025
dc.date.none.fl_str_mv 2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/186855
https://doi.org/10.3390/s26010202
url https://hdl.handle.net/11441/186855
https://doi.org/10.3390/s26010202
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Sensors, 26 (1), 202.
PID2022-137543NB-I00
101008126
https://www.mdpi.com/1424-8220/26/1/202
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv MDPI
publisher.none.fl_str_mv MDPI
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869406195708592128
score 15,81155

Similares en LA Referencia