Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures

We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films with the ratio N/Si<1.33) or to nitrogen (for films whe...

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Autores: Martil De La Plaza, Ignacio, González Díaz, Germán, García, S., Castán, E., Dueñas, S., Fernández, M.
Formato: artículo
Fecha de publicación:1998
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59299
Acesso em linha:https://hdl.handle.net/20.500.14352/59299
Access Level:acceso abierto
Palavra-chave:537
Chemical-Vapor-Deposition
Silicon-Nitride Films
Level Transient Spectroscopy
Si-SiO2 Interfaces
Room-Temperature
Hydrogen Content
Plasma
Oxide
Dielectrics
Traps.
Electricidad
Electrónica (Física)
2202.03 Electricidad
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oai_identifier_str oai:docta.ucm.es:20.500.14352/59299
network_acronym_str ES
network_name_str España
repository_id_str
spelling Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structuresMartil De La Plaza, IgnacioGonzález Díaz, GermánGarcía, S.Castán, E.Dueñas, S.Fernández, M.537Chemical-Vapor-DepositionSilicon-Nitride FilmsLevel Transient SpectroscopySi-SiO2 InterfacesRoom-TemperatureHydrogen ContentPlasmaOxideDielectricsTraps.ElectricidadElectrónica (Física)2202.03 ElectricidadWe have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films with the ratio N/Si<1.33) or to nitrogen (for films where the ratio N/Si is higher than 1.33). In the films with the N/Si ratio of 1.38, the hydrogen content is 6 at. %. For compositions which are comprised of between N/Si=1.1 and 1.4, hydrogen concentration remains below 10 at. %. The films with N/Si=1.38 exhibited the better values of the electrical properties (resistivity, 6x10(13) Omega cm; and electric breakdown field, 3 MV/cm). We have used these films to make metal-insulator-semiconductor (MIS) devices on n-type silicon wafers. C-V measurements accomplished on the structures indicate that the interface trap density is kept in the range (3 - 5) x 10(11) cm(-2) eV(-1) for films with the N/Si ratio below 1.38. For films where the N/Si ratio is higher than 1.3, the trap density suddenly increases, following the same trend of the concentration of N-H bonds in the SiNx:H films. The results are explained on the basis of the model recently reported by Lucovsky [J. Vac. Sci. Technol. B 14, 2832 (1996)] for the electrical behavior of (oxide-nitride-oxide)/Si structures. The model is additionally supported by deep level transient spectroscopy measurements, that show the presence of silicon dangling bonds at the insulator/semiconductor interface (the so-called P-bN0 center), The concentration of these centers follows the same trend with the film composition of the interface trap density and, as a consequence, with the concentration of N-H bonds. This result further supports the N-H bonds located at the insulator/semiconductor interface which act as a precursor site to the defect generation of the type . Si=Si-3, i.e., the P-bN0 centers. A close relation between interface trap density, P-bN0 centers and N-H bond density is established.American Institute of PhysicsUniversidad Complutense de Madrid19981998-01-0119981998-01-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59299reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/592992026-06-02T12:44:21Z
dc.title.none.fl_str_mv Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
title Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
spellingShingle Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
Martil De La Plaza, Ignacio
537
Chemical-Vapor-Deposition
Silicon-Nitride Films
Level Transient Spectroscopy
Si-SiO2 Interfaces
Room-Temperature
Hydrogen Content
Plasma
Oxide
Dielectrics
Traps.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
title_full Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
title_fullStr Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
title_full_unstemmed Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
title_sort Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
García, S.
Castán, E.
Dueñas, S.
Fernández, M.
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
García, S.
Castán, E.
Dueñas, S.
Fernández, M.
author_role author
author2 González Díaz, Germán
García, S.
Castán, E.
Dueñas, S.
Fernández, M.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Chemical-Vapor-Deposition
Silicon-Nitride Films
Level Transient Spectroscopy
Si-SiO2 Interfaces
Room-Temperature
Hydrogen Content
Plasma
Oxide
Dielectrics
Traps.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Chemical-Vapor-Deposition
Silicon-Nitride Films
Level Transient Spectroscopy
Si-SiO2 Interfaces
Room-Temperature
Hydrogen Content
Plasma
Oxide
Dielectrics
Traps.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films with the ratio N/Si<1.33) or to nitrogen (for films where the ratio N/Si is higher than 1.33). In the films with the N/Si ratio of 1.38, the hydrogen content is 6 at. %. For compositions which are comprised of between N/Si=1.1 and 1.4, hydrogen concentration remains below 10 at. %. The films with N/Si=1.38 exhibited the better values of the electrical properties (resistivity, 6x10(13) Omega cm; and electric breakdown field, 3 MV/cm). We have used these films to make metal-insulator-semiconductor (MIS) devices on n-type silicon wafers. C-V measurements accomplished on the structures indicate that the interface trap density is kept in the range (3 - 5) x 10(11) cm(-2) eV(-1) for films with the N/Si ratio below 1.38. For films where the N/Si ratio is higher than 1.3, the trap density suddenly increases, following the same trend of the concentration of N-H bonds in the SiNx:H films. The results are explained on the basis of the model recently reported by Lucovsky [J. Vac. Sci. Technol. B 14, 2832 (1996)] for the electrical behavior of (oxide-nitride-oxide)/Si structures. The model is additionally supported by deep level transient spectroscopy measurements, that show the presence of silicon dangling bonds at the insulator/semiconductor interface (the so-called P-bN0 center), The concentration of these centers follows the same trend with the film composition of the interface trap density and, as a consequence, with the concentration of N-H bonds. This result further supports the N-H bonds located at the insulator/semiconductor interface which act as a precursor site to the defect generation of the type . Si=Si-3, i.e., the P-bN0 centers. A close relation between interface trap density, P-bN0 centers and N-H bond density is established.
publishDate 1998
dc.date.none.fl_str_mv 1998
1998-01-01
1998
1998-01-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59299
url https://hdl.handle.net/20.500.14352/59299
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869405661519937536
score 15,300724

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