Cathodoluminescence from nanocrystalline silicon films and porous silicon

Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show a dominant band at 400 nm as well as a band centered at about 650 nm. CL spectra of porous silicon samples also show emission at 400 nm. Sp...

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Detalhes bibliográficos
Autores: Piqueras De Noriega, Francisco Javier, Méndez Martín, María Bianchi, Plugaru, R., Craciun, G., García, J. A., Remon, A.
Formato: artículo
Fecha de publicación:1999
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/58945
Acesso em linha:https://hdl.handle.net/20.500.14352/58945
Access Level:acceso abierto
Palavra-chave:538.9
Luminescence Properties
Photoluminescence
Emission
Si
Física de materiales
id ES_2f054e252392e779ff3eb29e89422d88
oai_identifier_str oai:docta.ucm.es:20.500.14352/58945
network_acronym_str ES
network_name_str España
repository_id_str
spelling Cathodoluminescence from nanocrystalline silicon films and porous siliconPiqueras De Noriega, Francisco JavierMéndez Martín, María BianchiPlugaru, R.Craciun, G.García, J. A.Remon, A.538.9Luminescence PropertiesPhotoluminescenceEmissionSiFísica de materialesLuminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show a dominant band at 400 nm as well as a band centered at about 650 nm. CL spectra of porous silicon samples also show emission at 400 nm. Spectral changes induced by annealing and implantation treatments of the films suggest that the presence of nanocrystals is the origin of the observed CL.SpringerUniversidad Complutense de Madrid19991999-03-0119991999-03-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/58945reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/589452026-06-02T12:44:21Z
dc.title.none.fl_str_mv Cathodoluminescence from nanocrystalline silicon films and porous silicon
title Cathodoluminescence from nanocrystalline silicon films and porous silicon
spellingShingle Cathodoluminescence from nanocrystalline silicon films and porous silicon
Piqueras De Noriega, Francisco Javier
538.9
Luminescence Properties
Photoluminescence
Emission
Si
Física de materiales
title_short Cathodoluminescence from nanocrystalline silicon films and porous silicon
title_full Cathodoluminescence from nanocrystalline silicon films and porous silicon
title_fullStr Cathodoluminescence from nanocrystalline silicon films and porous silicon
title_full_unstemmed Cathodoluminescence from nanocrystalline silicon films and porous silicon
title_sort Cathodoluminescence from nanocrystalline silicon films and porous silicon
dc.creator.none.fl_str_mv Piqueras De Noriega, Francisco Javier
Méndez Martín, María Bianchi
Plugaru, R.
Craciun, G.
García, J. A.
Remon, A.
author Piqueras De Noriega, Francisco Javier
author_facet Piqueras De Noriega, Francisco Javier
Méndez Martín, María Bianchi
Plugaru, R.
Craciun, G.
García, J. A.
Remon, A.
author_role author
author2 Méndez Martín, María Bianchi
Plugaru, R.
Craciun, G.
García, J. A.
Remon, A.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Luminescence Properties
Photoluminescence
Emission
Si
Física de materiales
topic 538.9
Luminescence Properties
Photoluminescence
Emission
Si
Física de materiales
description Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show a dominant band at 400 nm as well as a band centered at about 650 nm. CL spectra of porous silicon samples also show emission at 400 nm. Spectral changes induced by annealing and implantation treatments of the films suggest that the presence of nanocrystals is the origin of the observed CL.
publishDate 1999
dc.date.none.fl_str_mv 1999
1999-03-01
1999
1999-03-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/58945
url https://hdl.handle.net/20.500.14352/58945
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869405449493676032
score 15.301603

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