Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and sil...

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Detalles Bibliográficos
Autores: Llobet, Jordi, Rius, Gemma, Chuquitarqui, Alex, Borrisé, Xavier, Perez Murano, Francesc X.
Tipo de recurso: artículo
Estado:Versión enviada para evaluación y publicación
Fecha de publicación:2018
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/164575
Acceso en línea:http://hdl.handle.net/10261/164575
Access Level:acceso abierto
Palabra clave:Nanowires
Nanofabrication
Focused Ion Beam
Nanomechanics
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spelling Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technologyLlobet, JordiRius, GemmaChuquitarqui, AlexBorrisé, XavierPerez Murano, Francesc X.NanowiresNanofabricationFocused Ion BeamNanomechanicsWe present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.SNM (FP7-ICT-2011-8)) and Nanointegra (TEC2015-69864-R)Peer reviewedInstitute of Physics (Great Britain)European CommissionMinisterio de Ciencia e Innovación (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]201820182018info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Preprintinfo:eu-repo/semantics/submittedVersionhttp://hdl.handle.net/10261/164575reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#SNM (FP7-ICT-2011-8)TEC2015-69864-Rhttps://doi.org/10.1088/1361-6528/aaac67Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1645752026-05-22T06:33:51Z
dc.title.none.fl_str_mv Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology
title Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology
spellingShingle Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology
Llobet, Jordi
Nanowires
Nanofabrication
Focused Ion Beam
Nanomechanics
title_short Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology
title_full Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology
title_fullStr Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology
title_full_unstemmed Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology
title_sort Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology
dc.creator.none.fl_str_mv Llobet, Jordi
Rius, Gemma
Chuquitarqui, Alex
Borrisé, Xavier
Perez Murano, Francesc X.
author Llobet, Jordi
author_facet Llobet, Jordi
Rius, Gemma
Chuquitarqui, Alex
Borrisé, Xavier
Perez Murano, Francesc X.
author_role author
author2 Rius, Gemma
Chuquitarqui, Alex
Borrisé, Xavier
Perez Murano, Francesc X.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv European Commission
Ministerio de Ciencia e Innovación (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Nanowires
Nanofabrication
Focused Ion Beam
Nanomechanics
topic Nanowires
Nanofabrication
Focused Ion Beam
Nanomechanics
description We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.
publishDate 2018
dc.date.none.fl_str_mv 2018
2018
2018
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Preprint
info:eu-repo/semantics/submittedVersion
format article
status_str submittedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/164575
url http://hdl.handle.net/10261/164575
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
SNM (FP7-ICT-2011-8)
TEC2015-69864-R
https://doi.org/10.1088/1361-6528/aaac67
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Institute of Physics (Great Britain)
publisher.none.fl_str_mv Institute of Physics (Great Britain)
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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