Superconducting W-C nanopillars fabricated by Ga+ focused ion beam induced deposition
Ga+ Focused Ion Beam Induced Deposition (FIBID) is a highly flexible, single-step nanopatterning technique that makes use of a focused beam of Ga+ ions to locally induce the decomposition of a gaseous precursor material. In combination with the W(CO)6 precursor, Ga+ FIBID is known to yield a W–C com...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/280726 |
| Acceso en línea: | http://hdl.handle.net/10261/280726 |
| Access Level: | acceso abierto |
| Palabra clave: | Nanofabrication Focused ion beam Nanopillar Superconductivity |
| Sumario: | Ga+ Focused Ion Beam Induced Deposition (FIBID) is a highly flexible, single-step nanopatterning technique that makes use of a focused beam of Ga+ ions to locally induce the decomposition of a gaseous precursor material. In combination with the W(CO)6 precursor, Ga+ FIBID is known to yield a W–C compound that is superconducting below 4.7 K. While most reports on Ga+ FIBID-grown W–C focus on in-plane patterning, we demonstrate here that growth along the vertical direction may also be achieved by successively stacking a series of individual patterns that get deposited on top of each other. The nanopillars obtained following this procedure reach up to 10 μm in height, and have an aspect ratio of around 50. They exhibit a 68% of metallic W in terms of atomic content, higher than the 40% detected in their in-plane counterparts, while maintaining the superconducting properties. This approach also opens up the possibility of tuning their height and growth angle with respect to the substrate, exhibiting potential applicability in the design of 3D superconducting devices. |
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