Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability

A more realistic approach to evaluate the impact of polycrystalline metal gates on the MOSFET variability is presented. 2D experimental workfunction maps of a polycrystalline TiN layer were obtained by Kelvin Probe Force Microscopy with a nanometer resolution. These data were the input of a device s...

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Detalles Bibliográficos
Autores: Ruiz Flores, Ana|||0000-0002-2475-7353, Seoane, Natalia|||0000-0003-0973-461X, Claramunt, Sergi|||0000-0002-2888-7825, Garcia-Loureiro, Antonio|||0000-0003-0574-1513, Porti i Pujal, Marc|||0000-0001-7438-3823, Couso, Carlos|||0000-0003-4757-2439, Martin Martinez, Javier|||0000-0001-5938-5898, Nafria, Montserrat|||0000-0002-9549-2890
Tipo de recurso: artículo
Fecha de publicación:2019
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:249164
Acceso en línea:https://ddd.uab.cat/record/249164
https://dx.doi.org/urn:doi:10.1063/1.5090855
Access Level:acceso abierto
Palabra clave:KPFM
Polycrystalline metal gate
Variability
MOSFET
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spelling Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variabilityRuiz Flores, Ana|||0000-0002-2475-7353Seoane, Natalia|||0000-0003-0973-461XClaramunt, Sergi|||0000-0002-2888-7825Garcia-Loureiro, Antonio|||0000-0003-0574-1513Porti i Pujal, Marc|||0000-0001-7438-3823Couso, Carlos|||0000-0003-4757-2439Martin Martinez, Javier|||0000-0001-5938-5898Nafria, Montserrat|||0000-0002-9549-2890KPFMPolycrystalline metal gateVariabilityMOSFETA more realistic approach to evaluate the impact of polycrystalline metal gates on the MOSFET variability is presented. 2D experimental workfunction maps of a polycrystalline TiN layer were obtained by Kelvin Probe Force Microscopy with a nanometer resolution. These data were the input of a device simulator, which allowed us to evaluate the effect of the workfunction fluctuations on MOSFET performance variability. We have demonstrated that in the modelling of TiN workfunction variability not only the different workfunctions of the grains but also the grain boundaries should be included. 22019-01-0120192019-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/249164https://dx.doi.org/urn:doi:10.1063/1.5090855reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 RYC-2017-23312Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2016-75151-C3-1-RMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2014-53909-REDTopen accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2491642026-06-06T12:50:31Z
dc.title.none.fl_str_mv Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
title Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
spellingShingle Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
Ruiz Flores, Ana|||0000-0002-2475-7353
KPFM
Polycrystalline metal gate
Variability
MOSFET
title_short Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
title_full Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
title_fullStr Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
title_full_unstemmed Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
title_sort Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
dc.creator.none.fl_str_mv Ruiz Flores, Ana|||0000-0002-2475-7353
Seoane, Natalia|||0000-0003-0973-461X
Claramunt, Sergi|||0000-0002-2888-7825
Garcia-Loureiro, Antonio|||0000-0003-0574-1513
Porti i Pujal, Marc|||0000-0001-7438-3823
Couso, Carlos|||0000-0003-4757-2439
Martin Martinez, Javier|||0000-0001-5938-5898
Nafria, Montserrat|||0000-0002-9549-2890
author Ruiz Flores, Ana|||0000-0002-2475-7353
author_facet Ruiz Flores, Ana|||0000-0002-2475-7353
Seoane, Natalia|||0000-0003-0973-461X
Claramunt, Sergi|||0000-0002-2888-7825
Garcia-Loureiro, Antonio|||0000-0003-0574-1513
Porti i Pujal, Marc|||0000-0001-7438-3823
Couso, Carlos|||0000-0003-4757-2439
Martin Martinez, Javier|||0000-0001-5938-5898
Nafria, Montserrat|||0000-0002-9549-2890
author_role author
author2 Seoane, Natalia|||0000-0003-0973-461X
Claramunt, Sergi|||0000-0002-2888-7825
Garcia-Loureiro, Antonio|||0000-0003-0574-1513
Porti i Pujal, Marc|||0000-0001-7438-3823
Couso, Carlos|||0000-0003-4757-2439
Martin Martinez, Javier|||0000-0001-5938-5898
Nafria, Montserrat|||0000-0002-9549-2890
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv KPFM
Polycrystalline metal gate
Variability
MOSFET
topic KPFM
Polycrystalline metal gate
Variability
MOSFET
description A more realistic approach to evaluate the impact of polycrystalline metal gates on the MOSFET variability is presented. 2D experimental workfunction maps of a polycrystalline TiN layer were obtained by Kelvin Probe Force Microscopy with a nanometer resolution. These data were the input of a device simulator, which allowed us to evaluate the effect of the workfunction fluctuations on MOSFET performance variability. We have demonstrated that in the modelling of TiN workfunction variability not only the different workfunctions of the grains but also the grain boundaries should be included.
publishDate 2019
dc.date.none.fl_str_mv 2
2019-01-01
2019
2019-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/249164
https://dx.doi.org/urn:doi:10.1063/1.5090855
url https://ddd.uab.cat/record/249164
https://dx.doi.org/urn:doi:10.1063/1.5090855
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 RYC-2017-23312
Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2016-75151-C3-1-R
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2014-53909-REDT
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,198674

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