Reducing disorder in Ge quantum wells by using thick SiGe barriers
We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several heterostructure field effect transistors, we measure an average maximum m...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/381007 |
| Acceso en línea: | http://hdl.handle.net/10261/381007 https://api.elsevier.com/content/abstract/scopus_id/85210321739 |
| Access Level: | acceso abierto |
| Palabra clave: | Hall effect Percolation theory Field effect transistors Heterostructures Quantum wells Materials properties Quantum dots Transmission electron microscopy Solid solid interfaces High mobility electron gas |
| Sumario: | We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several heterostructure field effect transistors, we measure an average maximum mobility of ( 4.4 ± 0.2 ) × 10 6 cm 2 / Vs at a saturation density of ( 1.72 ± 0.03 ) × 10 11 cm − 2 , corresponding to a long mean free path of ( 30 ± 1 ) μ m . The highest measured mobility is 4.68 × 10 6 cm 2 / Vs . We identify uniform background impurities and interface roughness as the dominant scattering mechanisms limiting mobility in a representative device, and we evaluate a percolation-induced critical density of ( 4.5 ± 0.1 ) × 10 9 cm − 2 . This low-disorder heterostructure, according to simulations, may support the electrostatic confinement of holes in gate-defined quantum dots. |
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