Positron annihilation analysis of nanopores and growth mechanism of oblique angle evaporated TiO2 and SiO2 thin films and multilayers

The nano-porosity embedded into the tilted and separated nanocolumns characteristic of the microstructure of evaporated thin films at oblique angles has been critically assessed by various variants of the positron annihilation spectroscopy. This technique represents a powerful tool for the analysis...

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Detalhes bibliográficos
Autores: García-Valenzuela, Aurelio, Butterling, Maik, Liedke, Maciej O., Hirschmann, Eric, Trinh, T.T., Attallah, Ahmed G., Wagner, A., Álvarez, Rafael, Gil-Rostra, J., Rico, Víctor J., Palmero, Alberto, González-Elipe, Agustín R.
Formato: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2020
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/216736
Acesso em linha:http://hdl.handle.net/10261/216736
Access Level:acceso abierto
Palavra-chave:Positron annihilation
Micropores
OAD thin films
TiO2
SiO2
Growing mechanism
Descrição
Resumo:The nano-porosity embedded into the tilted and separated nanocolumns characteristic of the microstructure of evaporated thin films at oblique angles has been critically assessed by various variants of the positron annihilation spectroscopy. This technique represents a powerful tool for the analysis of porosity, defects and internal interfaces of materials, and has been applied to different as-deposited SiO and TiO thin films as well as SiO/TiO multilayers prepared by electron beam evaporation at 70° and 85° zenithal angles. It is shown that, under same deposition conditions, the concentration of internal nano-pores in SiO is higher than in TiO nanocolumns, while the situation is closer to this latter in TiO/SiO multilayers. These features have been compared with the predictions of a Monte Carlo simulation of the film growth and explained by considering the influence of the chemical composition on the growth mechanism and, ultimately, on the structure of the films.