A feedforward active gate voltage control method for SiC MOSFET driving

A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed drive...

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Autores: Ghorbani, Hamidreza|||0000-0001-9814-3277, Romeral Martínez, José Luis|||0000-0001-8112-8038
Tipo de recurso: artículo
Fecha de publicación:2023
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/428715
Acceso en línea:https://hdl.handle.net/2117/428715
https://dx.doi.org/10.22055/jaree.2023.39698.1045
Access Level:acceso abierto
Palabra clave:Active gate driver (AGD)
SiC MOSFET
Switching condition
Feedforward control
Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
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oai_identifier_str oai:upcommons.upc.edu:2117/428715
network_acronym_str ES
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repository_id_str
spelling A feedforward active gate voltage control method for SiC MOSFET drivingGhorbani, Hamidreza|||0000-0001-9814-3277Romeral Martínez, José Luis|||0000-0001-8112-8038Active gate driver (AGD)SiC MOSFETSwitching conditionFeedforward controlÀrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potènciaA new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed driver is based on a feedforward control method. This simple analog gate driver (GD) improves switching transient with minimum undesirable effect on the efficiency. This paper involves the entire switching condition (turn on/off), and the GD is applied to the SiC base technology of MOSFET. To evaluate the performance of the proposed GD, it will be compared with a conventional gate driver. The presented GD is validated by experimental tests. All the evaluations are carried out in a hard switching condition and at high-frequency operation.This work was supported by the Generalitat de Catalunya, grant number SGR 2017 SGR 967.Peer Reviewed20232023-01-0120252025-04-30journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/428715https://dx.doi.org/10.22055/jaree.2023.39698.1045reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution-NonCommercial 4.0 Internationalhttp://creativecommons.org/licenses/by-nc/4.0/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/4287152026-05-27T15:37:01Z
dc.title.none.fl_str_mv A feedforward active gate voltage control method for SiC MOSFET driving
title A feedforward active gate voltage control method for SiC MOSFET driving
spellingShingle A feedforward active gate voltage control method for SiC MOSFET driving
Ghorbani, Hamidreza|||0000-0001-9814-3277
Active gate driver (AGD)
SiC MOSFET
Switching condition
Feedforward control
Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
title_short A feedforward active gate voltage control method for SiC MOSFET driving
title_full A feedforward active gate voltage control method for SiC MOSFET driving
title_fullStr A feedforward active gate voltage control method for SiC MOSFET driving
title_full_unstemmed A feedforward active gate voltage control method for SiC MOSFET driving
title_sort A feedforward active gate voltage control method for SiC MOSFET driving
dc.creator.none.fl_str_mv Ghorbani, Hamidreza|||0000-0001-9814-3277
Romeral Martínez, José Luis|||0000-0001-8112-8038
author Ghorbani, Hamidreza|||0000-0001-9814-3277
author_facet Ghorbani, Hamidreza|||0000-0001-9814-3277
Romeral Martínez, José Luis|||0000-0001-8112-8038
author_role author
author2 Romeral Martínez, José Luis|||0000-0001-8112-8038
author2_role author
dc.subject.none.fl_str_mv Active gate driver (AGD)
SiC MOSFET
Switching condition
Feedforward control
Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
topic Active gate driver (AGD)
SiC MOSFET
Switching condition
Feedforward control
Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
description A new active gate drive for Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in this paper. The SiC MOSFET as an attractive replacement for insulated gate bipolar transistor (IGBT) has been regarded in many high power density converters. The proposed driver is based on a feedforward control method. This simple analog gate driver (GD) improves switching transient with minimum undesirable effect on the efficiency. This paper involves the entire switching condition (turn on/off), and the GD is applied to the SiC base technology of MOSFET. To evaluate the performance of the proposed GD, it will be compared with a conventional gate driver. The presented GD is validated by experimental tests. All the evaluations are carried out in a hard switching condition and at high-frequency operation.
publishDate 2023
dc.date.none.fl_str_mv 2023
2023-01-01
2025
2025-04-30
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/2117/428715
https://dx.doi.org/10.22055/jaree.2023.39698.1045
url https://hdl.handle.net/2117/428715
https://dx.doi.org/10.22055/jaree.2023.39698.1045
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial 4.0 International
http://creativecommons.org/licenses/by-nc/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial 4.0 International
http://creativecommons.org/licenses/by-nc/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:UPCommons. Portal del coneixement obert de la UPC
instname:Universitat Politècnica de Catalunya (UPC)
instname_str Universitat Politècnica de Catalunya (UPC)
reponame_str UPCommons. Portal del coneixement obert de la UPC
collection UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,811543

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