Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices

Two-dimensional semiconducting materials such as MoS2 have gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices,...

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Detalles Bibliográficos
Autores: Bastante Flores, Pablo, Pucher, Thomas, Castellanos Gómez, Andrés
Tipo de recurso: artículo
Fecha de publicación:2024
País:España
Institución:Universidad Autónoma de Madrid
Repositorio:Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:inglés
OAI Identifier:oai:repositorio.uam.es:10486/717347
Acceso en línea:http://hdl.handle.net/10486/717347
https://dx.doi.org/10.1088/1361-6528/ad77dc
Access Level:acceso abierto
Palabra clave:2D-based devices
air environment
electronic properties
hBN capping
vacuum thermal annealing
Física
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spelling Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devicesBastante Flores, PabloPucher, ThomasCastellanos Gómez, Andrés2D-based devicesair environmentelectronic propertieshBN cappingvacuum thermal annealingFísicaTwo-dimensional semiconducting materials such as MoS2 have gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices, one needs to consider the effect of the environment in which the characterization is carried out. Air exposure has a non-negligible impact on the electronic performance and vacuum thermal annealing is an established method to decrease the effects of adsorbates. Nevertheless, when measurements are performed in ambient conditions these effects arise again. In this work, we study the changes in the electrical and optoelectronic properties of single-layer MoS2-based devices at air exposure after thermal annealing treatment. Measurements are carried out in an in-situ vacuum thermal annealing system, enabling the recording of electrical performance degradation over time. Moreover, this work shows how hexagonal boron nitride (hBN) capping improves device performance, both in vacuum and after venting, as well as stability, by decreasing the degradation speed by around six times. The results suggest that vacuum thermal annealing and hBN capping are methods to mitigate the effects of air environment on these devicesThis work was funded by the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (grant agreement n◦ 755655, ERCStG 2017 project 2D-TOPSENSE), and the Ministry of Science and Innovation (Spain) through the projects PID2020-115566RB-I00 and TED2021-132267B-I00, and CEX2018-000805-M-19-2, from which P B acknowledges financial support, ref. PRE2019-091388. We also acknowledge funding from the EU FLAG-ERA project To2Dox (JTC-2019-009) and the Comunidad de Madrid through the CAIRO-CM Project (Y2020/NMT-6661). ChatGPT (GPT-3.5, OpenAI’s largescale language-generation model) has been used to improve the titleInstitute of PhysicsDepartamento de Física de la Materia CondensadaFacultad de Ciencias20242024-09-17research articlehttp://purl.org/coar/resource_type/c_2df8fbb1VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10486/717347https://dx.doi.org/10.1088/1361-6528/ad77dcreponame:Biblos-e Archivo. Repositorio Institucional de la UAMinstname:Universidad Autónoma de MadridInglésengEuropean Commission http://dx.doi.org/10.13039/501100000780 Horizon 2020 Framework Programme 755655open accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:repositorio.uam.es:10486/7173472026-06-23T12:46:27Z
dc.title.none.fl_str_mv Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices
title Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices
spellingShingle Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices
Bastante Flores, Pablo
2D-based devices
air environment
electronic properties
hBN capping
vacuum thermal annealing
Física
title_short Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices
title_full Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices
title_fullStr Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices
title_full_unstemmed Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices
title_sort Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS2 devices
dc.creator.none.fl_str_mv Bastante Flores, Pablo
Pucher, Thomas
Castellanos Gómez, Andrés
author Bastante Flores, Pablo
author_facet Bastante Flores, Pablo
Pucher, Thomas
Castellanos Gómez, Andrés
author_role author
author2 Pucher, Thomas
Castellanos Gómez, Andrés
author2_role author
author
dc.contributor.none.fl_str_mv Departamento de Física de la Materia Condensada
Facultad de Ciencias
dc.subject.none.fl_str_mv 2D-based devices
air environment
electronic properties
hBN capping
vacuum thermal annealing
Física
topic 2D-based devices
air environment
electronic properties
hBN capping
vacuum thermal annealing
Física
description Two-dimensional semiconducting materials such as MoS2 have gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices, one needs to consider the effect of the environment in which the characterization is carried out. Air exposure has a non-negligible impact on the electronic performance and vacuum thermal annealing is an established method to decrease the effects of adsorbates. Nevertheless, when measurements are performed in ambient conditions these effects arise again. In this work, we study the changes in the electrical and optoelectronic properties of single-layer MoS2-based devices at air exposure after thermal annealing treatment. Measurements are carried out in an in-situ vacuum thermal annealing system, enabling the recording of electrical performance degradation over time. Moreover, this work shows how hexagonal boron nitride (hBN) capping improves device performance, both in vacuum and after venting, as well as stability, by decreasing the degradation speed by around six times. The results suggest that vacuum thermal annealing and hBN capping are methods to mitigate the effects of air environment on these devices
publishDate 2024
dc.date.none.fl_str_mv 2024
2024-09-17
dc.type.none.fl_str_mv research article
http://purl.org/coar/resource_type/c_2df8fbb1
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10486/717347
https://dx.doi.org/10.1088/1361-6528/ad77dc
url http://hdl.handle.net/10486/717347
https://dx.doi.org/10.1088/1361-6528/ad77dc
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv European Commission http://dx.doi.org/10.13039/501100000780 Horizon 2020 Framework Programme 755655
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Institute of Physics
publisher.none.fl_str_mv Institute of Physics
dc.source.none.fl_str_mv reponame:Biblos-e Archivo. Repositorio Institucional de la UAM
instname:Universidad Autónoma de Madrid
instname_str Universidad Autónoma de Madrid
reponame_str Biblos-e Archivo. Repositorio Institucional de la UAM
collection Biblos-e Archivo. Repositorio Institucional de la UAM
repository.name.fl_str_mv
repository.mail.fl_str_mv
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