Caracterización de capacitores MOS basados en peliculas de oxido de hafnio obtenidas a 150$^{\circ}$C
The fabrication and characterization of MOS capacitors with Hafnium Oxide as dielectric obtained at 150$^\circ$C is described. The Hafnium Oxide thin films were obtained by spin-coating. The MOS capacitors were characterized employing measurements of capacitance vs. voltage, capacitance vs. frequenc...
| Authors: | , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 2016 |
| Country: | México |
| Institution: | UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO |
| Repository: | Revista Mexicana de Física |
| Language: | English |
| OAI Identifier: | oai:ojs2.rmf.smf.mx:article/400 |
| Online Access: | https://rmf.smf.mx/ojs/index.php/rmf/article/view/400 |
| Access Level: | Open access |
| Keyword: | Hafnium oxide MOS capacitor electrical characterization |
| Summary: | The fabrication and characterization of MOS capacitors with Hafnium Oxide as dielectric obtained at 150$^\circ$C is described. The Hafnium Oxide thin films were obtained by spin-coating. The MOS capacitors were characterized employing measurements of capacitance vs. voltage, capacitance vs. frequency and current vs. voltage. The results demonstrate the feasibility of Hafnium Oxide film as a dielectric in electronic devices. |
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