Wave fronts may move upstream in semiconductor superlattices
In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this v...
| Autores: | , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2000 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/57219 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/57219 |
| Access Level: | acceso abierto |
| Palabra clave: | 530.1 Electric-field domains Gaas-Alas superlattices Negative differential conductivity Charge-density waves Transport phenomenon Self oscillations Bifurcation Stability Dynamics Física matemática |
| Sumario: | In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested. |
|---|